Datasheet > SKIIP703GD121-3DW

SKIIP703GD121-3DW

更新时间： 2024-11-19 03:59:11

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
1页	189K
描述
Half Bridge Based Peripheral Driver, 3000A

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SKIIP703GD121-3DW 数据手册

SKiiP 703GD121-3DUW

I. Power section 1 * SKiiP703GB121CT per phase

Absolute maximum ratings

SKiiPPACK

SK integrated intelligent

Power PACK

Symbol Conditions ¹⁾

Values

Units

IGBT and inverse diode

V_CES

3^rdGeneration

6-pack

1200

900

± 20

V_CC

V_GES

I_C

I_CM

I_F

Operating DC link voltage

SKiiP 703GD121-3DUW ³⁾

IGBT, T_{heat sink}= 25 / 70 °C

IGBT, t_p< 1 ms,T_{heat sink}= 25°C

Diode, T_{heat sink}= 25 / 70 °C

Diode, t_p< 1 ms

700 / 525

1400

525 / 393,75

900

4320

-40...+150 (125)

3000

Target data

I_FM

I_FSM

housing S33

Diode, T_j= 150 °C, 10ms; sin

I²t (Diode) Diode, T_j= 150 °C, 10ms

T_j, (T_stg)

kA²s

°C

V_isol

I_C-package

AC, 1min.

T_{heat sink}= 70°C, T_term= 115 °C

1 * 500

Characteristics

Symbol Conditions ¹⁾

min.

typ.

max.

Units

IGBT

V_(BR)CES

gate driver without supply

mΩ

≥V_CES

−

1,2

0,9

2,71

2,3

−

172

279

−

Features

• SKiiP technology inside

V_GE= 0,

T_j= 25 °C

−

I_CES

V_CE= V_CES

T_j= 125 °C

pressure contact of ceramic

to heat sink; low thermal

impedance

V_CEO

r_T

T_j= 125 °C

I_C= 490A,

I_C=490A,

V_CEsat

T_j= 125 °C

T_j= 25 °C

V_CC=600V

V_CC=900V

pressure contact of main

electric terminals

pressure contact of auxiliary

electric terminals

increased thermal cycling

capability

V_CEsat

E_on+ E_off

−

T_j= 125 °C

L_CE

per SKiiP, AC side

top, bottom

−

R_CC´-EE´

resistance, terminal-chip

0,40

mΩ

low stray inductance

homogenous current

distribution

Inverse diode ²⁾

V_F= V_ECI_F= 450A;

V_F= V_EC

E_on+ E_offI_F= 450A;

V_TO

r_T

T_j= 125 °C

T_j= 25 °C

T_j= 125 °C

1,8

−

1,0

1,83

−

2,5

−

I_F= 450A;

• integrated current sensor

• integrated temperature sensor

• high power density

T_j= 125 °C

mΩ

T_heatsink= 25 °C, unless

otherwise specified

CAL = Controlled Axial Lifetime

Technology (soft and fast)

Thermal characteristics

R_thjs

R_thsa

per IGBT

per diode

0,047

0,092

0,033

0,010

°C/W

−

L: P16 heat sink; 280 m³/ h

W: WK 40; 8l/min; 50% glycol

D integrated gate driver

U with DC-bus voltage

measurement (option for GB)

L mounted on standard P16 for

forced air cooling

W mounted on standard water

cooler

Current sensor

I_{p RMS}

I_{pmax RMS}

1 * 400

1 * 500

T_a=100° C , V_supply= ± 15V

t ≤ 2 s

_supply≥ ±14,25V, 0≤I≤ ± 700A,

Linearity

0,1

per sensor

T_term= temperature of terminal

with SKiiPPACK 3^rdgeneration

I_ppeak

t ≤ 10 µs, per sensor

± 3000

gate driver

assembly instruction must be

followed

measured at chip level

Mechanical data

DC terminals, SI Units

AC terminals, SI Units

to heat sink ⁶⁾

−

external paralleling necessary

This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,

expressed or implied is made regarding delivery, performance or suitability.

by SEMIKRON

000911

B 7 − 11

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