生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.83 |
Is Samacsys: | N | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE |
接口集成电路类型: | HALF BRIDGE BASED PERIPHERAL DRIVER | JESD-30 代码: | R-XXMA-X |
功能数量: | 2 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 输出电流流向: | SOURCE AND SINK |
标称输出峰值电流: | 826 A | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | MICROELECTRONIC ASSEMBLY |
认证状态: | Not Qualified | 最大供电电压: | 15.6 V |
最小供电电压: | 14.4 V | 标称供电电压: | 15 V |
电源电压1-最大: | 30 V | 电源电压1-分钟: | 20 V |
电源电压1-Nom: | 24 V | 表面贴装: | NO |
温度等级: | OTHER | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKIIP802GB061-259CTVF | SEMIKRON |
获取价格 |
Half Bridge Based Peripheral Driver | |
SKIIP802GB061-259CTVU | SEMIKRON |
获取价格 |
Half Bridge Based Peripheral Driver | |
SKIIP802GB120040 | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120-401FT | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, | |
SKIIP802GB120401W | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120401W-F | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120401W-FT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120401WT-F | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120401WT-FT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GH061-2259CTV | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, |