是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.84 |
内置保护: | TRANSIENT; OVER CURRENT; THERMAL | 接口集成电路类型: | HALF BRIDGE BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-XXMA-X | JESD-609代码: | e3/e4 |
功能数量: | 1 | 最高工作温度: | 85 °C |
最低工作温度: | -25 °C | 输出电流流向: | SOURCE AND SINK |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 标称供电电压: | 15 V |
表面贴装: | NO | 温度等级: | OTHER |
端子面层: | TIN/SILVER | 端子形式: | UNSPECIFIED |
端子位置: | UNSPECIFIED | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKIIP802GB061-259CTVU | SEMIKRON |
获取价格 |
Half Bridge Based Peripheral Driver | |
SKIIP802GB120040 | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120-401FT | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 800A I(C), 1200V V(BR)CES, | |
SKIIP802GB120401W | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120401W-F | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120401W-FT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120401WT-F | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GB120401WT-FT | SEMIKRON |
获取价格 |
Large IGBT Power Packs | |
SKIIP802GH061-2259CTV | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES, | |
SKIIP803GD061-3DUW | SEMIKRON |
获取价格 |
6-pack-integrated intelligent power system |