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SKIIP792GB170-370WT PDF预览

SKIIP792GB170-370WT

更新时间： 2024-11-20 20:11:19
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 驱动接口集成电路
页数 文件大小 规格书
2页 39K
描述
Half Bridge Based Peripheral Driver, 10A

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中文翻译

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SKIIP792GB170-370WT 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.75
内置保护：TRANSIENT; OVER CURRENT; THERMAL; UNDER VOLTAGE接口集成电路类型：HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码：R-XXMA-X功能数量：1
最高工作温度：85 °C最低工作温度：-25 °C
输出电流流向：SOURCE AND SINK标称输出峰值电流：10 A
封装主体材料：UNSPECIFIED封装形状：RECTANGULAR
封装形式：MICROELECTRONIC ASSEMBLY认证状态：Not Qualified
最大供电电压：15.6 V最小供电电压：14.4 V
标称供电电压：15 V电源电压1-最大：28.8 V
电源电压1-分钟：20.4 V电源电压1-Nom：24 V
表面贴装：NO温度等级：OTHER
端子形式：UNSPECIFIED端子位置：UNSPECIFIED
Base Number Matches：1

SKIIP792GB170-370WT 数据手册

 浏览型号SKIIP792GB170-370WT的Datasheet PDF文件第2页 
SKiiPPACK®  
SK integrated  
intelligent Power PACK  
SKiiP 792 GB 170 - 370 WT/FT  
Absolute Maximum Ratings  
Symbol  
Conditions 1)  
Values  
Units  
halfbridge  
IGBT & Inverse Diode  
SKiiP 792 GB 170  
VCES  
1700  
1200  
750  
V
V
A
+ Driver 370 WT/FT 7)  
9)  
VCC  
IC  
Operating DC link voltage  
Theatsink = 25 °C  
Preliminary Data  
ICM  
Tj  
Visol  
IF  
Theatsink = 25 °C; tp < 1 ms  
IGBT & Diode  
AC, 1 min.  
1500  
– 55 . . .+ 150  
4000  
A
°C  
V
Case S3  
3)  
4)  
Theatsink = 25 °C  
620  
A
IFM  
IFSM  
Theatsink = 25 °C; tp < 1 ms  
tp = 10 ms; sin.; Tj = 150 °C  
1500  
6480  
210  
A
A
I2t (Diode) tp = 10 ms; Tj = 150 °C  
kA2s  
Driver  
VS1  
VS2  
Stabilized power supply  
Nonstabilized power supply  
Primary to second. side  
Operating / stor. temperature  
(version FT)  
18  
30  
75  
V
V
kV/µs  
°C  
10)  
dv/dt  
op, Tstg  
T
– 25(0) . . .+ 85(70)  
Characteristics  
Symbol  
Conditions 1)  
Driver without power supply  
min.  
typ.  
max. Units  
V(BR)CES  
ICES  
≥ VCES  
–
–
–
–
–
1,2  
45  
–
–
–
–
–
–
V
mA  
mA  
V
V
A
VGE = 0  
CE = VCES  
Tj = 25 °C  
Tj = 125 °C  
V
11)  
VCEsat  
VCEsat  
ICETRIP  
IC = 562 A Tj = 25 (125) °C  
IC = 750 A Tj = 25 (125) °C  
Tj = 125 °C; Vs = 15 V ± 0,6V  
3,3 (4,6)  
3,75 (5,65)  
–
11)  
Features  
•
•
Low thermal impedance  
Optimal thermal management  
with integrated heatsink  
Pressure contact technology  
with increased power cycling  
capability, compact design  
Low stray inductance  
High power, small losses  
Overtemp. protection  
Short circuit protection  
≥ 940  
CCHC  
LCE  
per SKiiPPACK AC side  
Top (Bottom)  
–
–
2,4  
5
–
–
nF  
nH  
•
td(on)  
td(on)Driver  
tr  
td(off)  
td(off)Driver  
tf  
VCC = 1200 V  
IC = 750 A  
Tj = 125 °C  
inductive load  
–
200  
1,2  
300  
2
1,2  
120  
975  
–
–
–
–
–
–
–
ns  
µs  
ns  
µs  
µs  
ns  
mJ  
–
–
–
–
–
•
•
•
•
•
Isolated power supply  
Eon + Eoff  
Inverse Diode 2)  
1)  
Theatsink = 25 °C, unless  
otherwise specified  
VF11)=VEC IF = 675 A Tj = 25 (125) °C  
–
–
–
–
–
2,3 (2,1)  
2,6 (2,5)  
0,9  
1,8  
90  
–
–
–
–
–
V
V
V
mΩ  
mJ  
IF = 900 A Tj = 25 (125) °C  
2)  
CAL = Controlled Axial Lifetime  
Technology (soft and fast)  
without driver  
Driver input to DC link/AC output  
or DC link/AC output to heatsink  
other heatsink on request  
W - Driver wire input  
VTO  
Tj = 125 °C  
rT  
Tj = 125 °C  
3)  
4)  
Eon + Eoff  
IF = 750 A;Tj =125 °C  
Thermal Characteristics  
6)  
7)  
Rthjh  
Rthjh  
Ttp  
per IGBT  
per diode  
–
–
109  
–
0,027  
0,09  
115  
–
–
121  
–
K/W  
K/W  
°C  
12)  
Over temperature protection  
F - Fiber optic input  
6)  
Rthha  
P16/280 F; vair = 285 m3 / h  
0,036  
K/W  
T - Temperature protection  
AC connection busbars must be  
connected by user, copper bus-  
bars available on request  
with SK-DC link (low inductance)  
24 V supply voltage selective  
Chip voltage drop  
8)  
Mechanical Data  
Mdc  
Mac  
Case  
for DC terminals, SI Units  
for AC terminals, SI Units  
4
8
–
–
S3  
6
10  
Nm  
Nm  
9)  
10)  
11)  
12)  
thermal reference for Rthjh; Rthha  
© by SEMIKRON  
0796  
B 7 – 61  
12

中文翻译

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