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SKIIP802GH061-2259CTV PDF预览

SKIIP802GH061-2259CTV

更新时间： 2024-10-26 19:47:43
品牌 Logo 应用领域
赛米控丹佛斯 - SEMIKRON 栅
页数 文件大小 规格书
1页 18K
描述
Insulated Gate Bipolar Transistor, 800A I(C), 600V V(BR)CES,

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SKIIP802GH061-2259CTV 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：compliant风险等级：5.73
最大集电极电流 (IC)：800 A集电极-发射极最大电压：600 V
元件数量：1最高工作温度：150 °C
子类别：Insulated Gate BIP TransistorsVCEsat-Max：2.6 V
Base Number Matches：1

SKIIP802GH061-2259CTV 数据手册

  
SKiiP 802 GH 061 - 2*259 CTV  
Absolute Maximum Ratings  
SKiiPPACK  
SK integrated intelligent  
Power PACK  
single phase bridge  
SKiiP  
Symbol Conditions 1)  
Values  
2500  
Units  
V
4)  
Visol  
AC, 1min  
Top ,Tstg  
Operating / stor. temperature  
-25...+85  
°C  
IGBT and Inverse Diode  
VCES  
802 GH 061 - 2*259 CTV  
7,9)  
600  
400  
800  
V
V
A
°C  
A
5)  
VCC  
IC  
Tj  
Operating DC link voltage  
IGBT  
IGBT + Diode  
Diode  
Preliminary Data  
Case S5  
3)  
-40...+150  
800  
IF  
IFM  
IFSM  
Diode, tp < 1 ms  
Diode, Tj = 150 °C, 10ms; sin  
1600  
8000  
320  
A
A
I2t (Diode) Diode, Tj = 150 °C, 10ms  
Driver  
kAs2  
VS1  
VS2  
fsmax  
dV/dt  
Stabilized Power Supply  
Non-stabilized Power Supply  
Switching frequency  
18  
30  
20  
75  
V
V
kHz  
kV/µs  
Primary to secondary side  
Characteristics  
Symbol Conditions 1)  
min.  
typ.  
max.  
Units  
Features  
IGBT11)  
V(BR)CES  
• Short circuit protection, due to  
evaluation of current sensor  
signals  
Driver without supply  
V
mA  
mA  
≥VCES  
−
−
12  
−
0,8  
−
0,94  
2,1  
2,6  
ICES  
VGE = 0,  
CE = VCES  
Tj = 25 °C  
Tj = 125 °C  
−
−
−
−
−
−
−
V
• Isolated power supply  
• Low thermal impedance  
• Optimal thermal management  
with integrated heatsink  
• Pressure contact technology  
with increased power cycling  
capability, compact design  
• Low stray inductance  
• High power, small losses  
• Over-temperature protection  
VTO  
rT  
VCesat  
VCesat  
Tj = 125 °C  
Tj = 125 °C  
IC = 800A,  
IC = 800A,  
V
−
−
−
−
−
mΩ  
V
V
Tj = 125 °C  
Tj = 25 °C  
2,60  
72/102  
Eon + Eoff VCC=300/400V,IC=800A  
Tj = 125 °C  
mJ  
CCHC  
LCE  
per SkiiP, AC side  
Top, Bottom  
1,6  
7,5  
nF  
nH  
−
−
−
−
Inverse Diode 2)  
1)  
Theatsink = 25 °C, unless  
VF = VEC IF= 800A;  
Tj = 125 °C  
Tj = 25 °C  
Tj = 125 °C  
1,72  
1,75  
24  
0,78  
1,2  
V
V
mJ  
V
−
−
−
−
−
−
−
−
−
−
otherwise specified  
CAL = Controlled Axial Lifetime  
VF= VEC  
IF= 800A  
2)  
Eon + Eoff IF= 800A;  
Technology (soft and fast)  
without driver  
Driver input to DC link /  
3)  
VTO  
rT  
Tj = 125 °C  
Tj = 125 °C  
4)  
mΩ  
AC output to DC link / AC  
output to heatsink  
with Semikron-DC link (low  
inductance)  
other heatsinks on request  
C - Integrated current sensors  
T - Temperature protection  
V - 15 V or 24 V power supply  
AC connection busbars must be  
Thermal Characteristics  
10)  
Rthjs  
Rthjs  
Rthsa  
per IGBT  
per Diode  
P16 heatsink; see case S5  
0,050  
0,094  
33  
K/W  
K/W  
K/KW  
−
−
−
−
−
−
5)  
10)  
6,10)  
6)  
Driver  
IS1  
IS2  
7)  
Supply current 15V-supply  
Supply current 24V-supply  
Interlock-time  
210+390*fs /fsmax+1,3*IAC/A  
160+290*fs /fsmax+1,0*IAC/A  
2,3  
mA  
mA  
µs  
8)  
tinterlock-driver  
SKiiPPACK protection  
connected by the user; copper  
busbars available on request  
options available for driver:  
U - DC link voltage sense  
F – Fiber optic connector  
“s” referenced to temperature  
ITRIPSC  
ITRIPLG  
TTRIP  
Short circuit protection  
826  
A
A
°C  
V
9)  
Ground fault protection  
Over-temp. protection  
UDC-protection  
115  
410  
9)  
UDCTRIP  
10)  
Mechanical Data  
sensor  
M1  
DC terminals, SI Units  
4
8
6
10  
Nm  
Nm  
−
−
11)  
NPT-technology with homo-  
M2  
AC terminals, SI Units  
genous current-distribution  
by SEMIKRON  
11.01.99  
1

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