生命周期: | Obsolete | 包装说明: | , |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.84 |
内置保护: | TRANSIENT; OVER CURRENT; THERMAL | 接口集成电路类型: | HALF BRIDGE BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-XXMA-X | 功能数量: | 1 |
最高工作温度: | 85 °C | 最低工作温度: | -25 °C |
输出电流流向: | SOURCE AND SINK | 标称输出峰值电流: | 250 A |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | MICROELECTRONIC ASSEMBLY | 认证状态: | Not Qualified |
表面贴装: | NO | 温度等级: | OTHER |
端子形式: | UNSPECIFIED | 端子位置: | UNSPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKIIP232GH120-210U | SEMIKRON |
获取价格 |
Half Bridge Based Peripheral Driver, 250A | |
SKIIP23AC126V1 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 2, 42 PI | |
SKIIP23AC12T3 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 33A I(C), 1200V V(BR)CES, N-Channel, CASE M2, MINISKIIP | |
SKIIP23AC12T4V1 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 1, 42 PI | |
SKIIP23NAB126V1 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP23NAB126V10 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP23NAB126V10_09 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP23NAB12T4V1 | SEMIKRON |
获取价格 |
3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP23NAB12T4V10 | SEMIKRON |
获取价格 |
Insulated Gate Bipolar Transistor, 41A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 2, 42 PI | |
SKIIP2403GB122-4DW | SEMIKRON |
获取价格 |
2-pack-integrated intelligent Power System |