是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | , | Reach Compliance Code: | unknown |
风险等级: | 5.73 | 最大集电极电流 (IC): | 2280 A |
集电极-发射极最大电压: | 1200 V | 元件数量: | 1 |
最高工作温度: | 150 °C | 子类别: | Insulated Gate BIP Transistors |
VCEsat-Max: | 2.1 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SKIIP2413GB123-4DL | SEMIKRON |
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2-pack-integrated intelligent Power System | |
SKIIP2413GB123-4DL_09 | SEMIKRON |
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2-pack-integrated intelligent Power System | |
SKIIP2414GB12E4-4DUW | SEMIKRON |
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Insulated Gate Bipolar Transistor, 3110A I(C), 1200V V(BR)CES | |
SKIIP24AC126V1 | SEMIKRON |
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3-phase bridge inverter | |
SKIIP24AC12T4V1 | SEMIKRON |
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3-phase bridge inverter | |
SKIIP24NAB126V1 | SEMIKRON |
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3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP24NAB126V10 | SEMIKRON |
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3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP24NAB126V10_09 | SEMIKRON |
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3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP24NAB12T4V1 | SEMIKRON |
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3-phase bridge rectifier + brake chopper + 3-phase bridge inverter | |
SKIIP24NAB12T4V10 | SEMIKRON |
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Insulated Gate Bipolar Transistor, 52A I(C), 1200V V(BR)CES, N-Channel, MINISKIIP 2, 42 PI |