Datasheet > SKI-FF530

SKI-FF530

更新时间： 2024-09-13 22:48:15

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
3页	156K
描述
Infrared emitting diode which mounted high power 850 nm IR CHIP

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中文翻译

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数据手册

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SKI-FF530 数据手册

SKI-FF530

IRED

1. Feature

▷ The SKI-FF530 is a infrared emitting diode which mounted high power 850㎚IR CHIP.

▷ It is encapsulated in water clear epoxy resin with 5㎜ diameter.

▷ The radiation substrate material is AlGaAs.

▷ High output power even of a low drive current.

▷ Fast response time

2. Absolute maximum ratings.

( Ta = 2 5℃ )

Parameter

Symbol

I_F

Ratings

Unit

㎃

Forward current

100

Reverse voltage

V_R

Peak forward current

Power dissipation

Operation temperature

Storage temperature

Soldering temperature

I_FM

150

P_D

㎽

℃

Topr.

Tstg.

Tsol.

- 20 + 80

- 30 + 100

260 (within 5 sec)

3. Electrical/optical characteristics.

Parameter

( Ta = 2 5℃ )

Symbol Test condition

Min.

Typ.

Max.

1.80

Unit

Forward voltage

Reverse current

V_F

I_R

I_F= 50 ㎃

V_R= 5 V

1.45

㎂

*Radiant intensity

Peak light emitting wavelength

Spectral half wave width

Viewing angle

P_O

I_F= 50 ㎃

850

㎽/㏛

㎚

λp

Δλ

Θ½

㎚

±30

deg

㎱

Response time

*Luminous intensity measuring equipment : OPTRONIC CABORATORIES OL-703C PROGRAMMABLE RADIOMETER.

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