Datasheet > SKiiP 03NAC12T4V1

SKiiP 03NAC12T4V1

更新时间： 2024-09-15 14:53:23

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		双极性晶体管
页数	文件大小	规格书
6页	371K
描述
IGBT Modules MiniSKiiP II 0 (34x31x16)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SKiiP 03NAC12T4V1 数据手册

浏览型号SKiiP 03NAC12T4V1的Datasheet PDF文件第2页

浏览型号SKiiP 03NAC12T4V1的Datasheet PDF文件第3页

浏览型号SKiiP 03NAC12T4V1的Datasheet PDF文件第4页

SKiiP 03NAC12T4V1

Absolute Maximum Ratings

Symbol Conditions

Inverter - IGBT

Values

Unit

T_j= 25 °C

V_CES

1200

7.5

-20 ... 20

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

I_C

T_j= 150 °C

T_j= 175 °C

I_Cnom

I_CRM

V_GES

MiniSKiiP^®0

V_CC= 800 V

_GE≤ 15 V

T_j= 150 °C

t_psc

µs

°C

_CES≤ 1200 V

T_j

-40 ... 175

SKiiP 03NAC12T4V1

Features*

Inverse - Diode

T_j= 25 °C

V_RRM

I_F

1200

°C

T_s= 25 °C

T_s= 70 °C

T_s= 25 °C

T_s= 70 °C

T_j= 150 °C

T_j= 175 °C

• Trench 4 IGBTs

I_F

• Robust and soft switching freewheeling

diodes in CAL technology

I_FRM

I_FSM

T_j

• Highly reliable spring contacts for

electrical connections

t_p= 10 ms, sin 180°, T_j= 150 °C

• UL recognized: File no. E63532

-40 ... 175

Rectifier - Diode

T_j= 25 °C

T_s= 25 °C, T_j= 150 °C

Remarks

V_RRM

I_F

1600

220

200

242

• Max. case temperature limited to

T_C=125°C

T_j= 25 °C

I_FSM

t_p= 10 ms

sin 180°

• Product reliability results valid for

T_j≤150°C (recommended

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

i²t

A²s

°C

_j,op=-40...+150°C)

t_p= 10 ms

sin 180°

• Temperature sensor: No basic

insulation to main circuit, max. potential

difference 850V to -DC

200

-40 ... 150

T_j

Module

I_t(RMS)

T_stg

T_terminal= 80 °C, 20 A per spring

module without TIM

AC sinus 50 Hz, 1 min

t.b.d.

-40 ... 125

2500

°C

V_isol

Characteristics

Symbol Conditions

Inverter - IGBT

min.

typ.

max.

Unit

I_C= 8 A

T_j= 25 °C

V_CE(sat)

1.85

2.25

2.10

2.45

_GE= 15 V

T_j= 150 °C

chiplevel

T_j= 25 °C

T_j= 150 °C

T_j= 25 °C

T_j= 150 °C

V_CE0

r_CE

0.80

0.70

131

194

5.8

0.90

0.80

150

206

6.5

mΩ

chiplevel

V_GE= 15 V

chiplevel

V_GE(th)

I_CES

V_GE= V_CEV, I_C= 1 mA

T_j= 25 °C

V_GE= 0 V

_CE= 1200 V

f = 1 MHz

C_ies

C_oes

C_res

0.49

0.05

0.03

V_CE= 25 V

_GE= 0 V

NAC

Rev. 5.0 – 21.09.2021

12 3 4 5 6

中文翻译

下载PDF

与SKiiP 03NAC12T4V1相关器件

型号	品牌	获取价格	描述	数据表
SKiiP 03NEB066V3	SEMIKRON	获取价格	IGBT Modules MiniSKiiP II 0 (34x31x16)
SKiiP 03NEC066V3	SEMIKRON	获取价格	IGBT Modules MiniSKiiP II 0 (34x31x16)
SKiiP 04AC066V1	SEMIKRON	获取价格	IGBT Modules MiniSKiiP II 0 (34x31x16)
SKiiP 1013 GB172-2DL V3	SEMIKRON	获取价格	IPM SKiiP3 (200x215x156)
SKiiP 1013 GB172-2DW V3	SEMIKRON	获取价格	IPM SKiiP3 (270x215x112)
SKiiP 10NAB12T4V1	SEMIKRON	获取价格	IGBT Modules MiniSKiiP II 1 (42x40x16)
SKiiP 11AC126V1	SEMIKRON	获取价格	IGBT Modules MiniSKiiP II 1 (42x40x16)
SKiiP 11AC126V10	SEMIKRON	获取价格	IGBT Modules MiniSKiiP II 1 (42x40x16)
SKiiP 11AC12T4V1	SEMIKRON	获取价格	IGBT Modules MiniSKiiP II 1 (42x40x16)
SKiiP 11AC12T7V1	SEMIKRON	获取价格	IGBT Modules MiniSKiiP II 1 (42x40x16)