Datasheet > SKCD 18 C 060 I3

SKCD 18 C 060 I3

更新时间： 2024-09-27 14:50:07

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	129K
描述
Chips

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SKCD 18 C 060 I3 数据手册

SKCD 18 C 060 I3

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.07 mA

V_RRM

I_FSM

600

220

200

150

A²s

°C

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

T_j= 150 °C, t_p= 10 ms, sin 180°

i²t

T_jmax

Electrical Characteristics

Symbol Conditions

CAL-DIODE

min.

typ.

max.

Unit

I_F(DC)= 30 A

T_c= 80 °C, T_j= 150 °C, F_i=PI/2,

_th(j-c)= 1.47 K/W,

I_F(AV)

I_R

V_RRM= 600 V

Semitrans Assembly

T_j= 25 °C, V_RRM= 600 V

T_j= 125 °C, V_RRM= 600 V

T_j= 25 °C, I_F= 25 A

T_j= 125 °C, I_F= 25 A

T_j= 125 °C

Size: 4.2 x 4.2 mm²

0.07

1.50

1.60

V_F

1.35

0.90

17.0

SKCD 18 C 060 I3

V_(TO)

r_T

Features

T_j= 125 °C

mΩ

ꢀ low forward voltage drop combined

with a low temperature dependence

ꢀ easy paralleling due to a small forward

voltage spread

Dynamic Characteristics

Symbol Conditions

min.

typ.

max.

Unit

ꢀ very soft recovery behavior

ꢀ small switching losses

T_j= 25 °C, 30 A, 300 V, 450 A/µs

E_rr

Q_rr

I_rrm

0.08

0.21

0.94

1.98

µC

ꢀ high ruggedness

T_j= 125 °C, 30 A, 300 V, 450 A/µs

T_j= 25 °C, 30 A, 300 V, 450 A/µs

T_j= 125 °C, 30 A, 300 V, 450 A/µs

T_j= 25 °C, 30 A, 300 V, 450 A/µs

T_j= 125 °C, 30 A, 300 V, 450 A/µs

ꢀ compatible to thick wire bonding

ꢀ compatible to all standard solder

processes

Typical Applications*

ꢀ freewheeling diode for IGBT

18.2

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

T_stg

T_solder

-40

150

250

320

°C

10 min.

5 min.

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

Area total

Anode

4.2 x 4.2

mm²

17.64

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

150 mm wafer on frame

Chips /

Package

848

pcs

SKCD

Rev. 0 – 23.01.2014

中文翻译

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