Datasheet > SKCD 47 C 060 I3

SKCD 47 C 060 I3

更新时间： 2024-11-15 14:53:03

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	119K
描述
Chips

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SKCD 47 C 060 I3 数据手册

SKCD 47 C 060 I3

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.1 mA

V_RRM

I_FSM

600

800

720

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

T_j= 150 °C, t_p= 10 ms, sin 180°

i²t

T_jmax

2592

150

A²s

°C

Electrical Characteristics

Symbol Conditions

CAL-DIODE

min.

typ.

max.

Unit

I_F(DC)= 80 A

T_c= 80 °C, T_j= 150 °C, F_i=PI/2,

_th(j-c)= 0.70 K/W,

I_F(AV)

I_R

V_RRM= 600 V

Semitrans Assembly

T_j= 25 °C, V_RRM= 600 V

T_j= 125 °C, V_RRM= 600 V

T_j= 25 °C, I_F= 85 A

T_j= 125 °C, I_F= 85 A

T_j= 125 °C

Size: 6.86 x 6.86 mm²

0.1

3.80

1.60

V_F

1.35

0.90

5.0

SKCD 47 C 060 I3

V_(TO)

r_T

Features

T_j= 125 °C

mΩ

ꢀ low forward voltage drop combined

with a low temperature dependence

ꢀ easy paralleling due to a small forward

voltage spread

Dynamic Characteristics

Symbol Conditions

min.

typ.

max.

Unit

ꢀ very soft recovery behavior

ꢀ small switching losses

T_j= 25 °C, 80 A, 300 V, 1200 A/µs

E_rr

Q_rr

I_rrm

0.4

2.8

6.2

µC

ꢀ high ruggedness

T_j= 125 °C, 80 A, 300 V, 1200 A/µs

T_j= 25 °C, 80 A, 300 V, 1200 A/µs

T_j= 125 °C, 80 A, 300 V, 1200 A/µs

T_j= 25 °C, 80 A, 300 V, 1200 A/µs

T_j= 125 °C, 80 A, 300 V, 1200 A/µs

ꢀ compatible to thick wire bonding

ꢀ compatible to all standard solder

processes

Typical Applications*

ꢀ freewheeling diode for IGBT

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

T_stg

T_solder

-40

150

250

320

°C

10 min.

5 min.

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

Area total

Anode

6.86 x 6.86

mm²

47.06

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

150 mm wafer on frame

Chips /

Package

306

pcs

SKCD

Rev. 0 – 23.01.2014

中文翻译

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