Datasheet > SKCD 47 C 120 I3

SKCD 47 C 120 I3

更新时间： 2024-11-15 14:54:35

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	121K
描述
Chips

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SKCD 47 C 120 I3 数据手册

SKCD 47 C 120 I3

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.15 mA

V_RRM

I_FSM

1200

720

600

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

T_j= 150 °C, t_p= 10 ms, sin 180°

i²t

T_jmax

1800

150

A²s

°C

Electrical Characteristics

Symbol Conditions

CAL-DIODE

min.

typ.

max.

Unit

I_F(DC)= 55 A

T_c= 80 °C, T_j= 150 °C, F_i=PI/2,

I_F(AV)

I_R

Semitrans Assembly; R_th(j-c)= 0.7 K/W

T_j= 25 °C, V_RRM= 1200 V

T_j= 125 °C, V_RRM= 1200 V

T_j= 25 °C, I_F= 55 A

V_RRM= 1200 V

0.15

4.00

2.50

2.30

Size: 6.86 x 6.86 mm²

V_F

2.00

1.79

1.18

10.9

SKCD 47 C 120 I3

T_j= 125 °C, I_F= 55 A

T_j= 125 °C

V_(TO)

r_T

m

Features

ꢀ low forward voltage drop combined

with a low temperature dependence

ꢀ easy paralleling due to a small forward

voltage spread

Dynamic Characteristics

Symbol Conditions

min.

typ.

max.

Unit

ꢀ very soft recovery behavior

ꢀ small switching losses

T_j= 25 °C, 55 A, 600 V, 1100 A/µs

E_rr

Q_rr

I_rrm

0.83

2.2

3.1

7.5

µC

T_j= 125 °C, 55 A, 600 V, 1100 A/µs

T_j= 25 °C, 55 A, 600 V, 1100 A/µs

T_j= 125 °C, 55 A, 600, 1100 A/µs

T_j= 25 °C, 55 A, 600 V, 1100 A/µs

T_j= 125 °C, 55 A, 600, 1100 A/µs

ꢀ high ruggedness

ꢀ compatible to thick wire bonding

ꢀ compatible to all standard solder

processes

Typical Applications*

ꢀ freewheeling diode for IGBT

ꢀ particularly suitable for frequencies > 8

kHz

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

T_stg

T_solder

-40

150

250

320

°C

10 min.

5 min.

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

Area total

Anode

6.86 x 6.86

mm²

47.06

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, diameter ≤ 500 µm

150 mm wafer frame

Chips /

Package

306

pcs

SKCD

Rev. 0 – 06.02.2013

中文翻译

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