SKCD 42 C 060 I HD
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.12 mA
VRRM
IFSM
600
985
810
V
A
A
Tj = 25 °C
Tj = 150 °C
10 ms
sin 180°
Tj = 150 °C, tp = 10 ms, sin 180°
i²t
Tjmax
3281
175
A²s
°C
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF = 100 A 1)
Tc = 80 °C, Tj = 175 °C, Fi=PI/2,
th(j-c) = 0.78 K/W,
R
IF(AV)
IR
75
A
VRRM = 600 V
Semitrans Assembly
Tj = 25 °C, VRRM = 600 V
Tj = 150 °C, VRRM = 600 V
Tj = 25 °C, IF = 75 A
Tj = 150 °C, IF = 75 A
Tj = 175 °C, IF = 75 A
Tj = 150 °C
Size: 6.48 x 6.48 mm²
0.12
22.00
1.48
1.34
1.26
0.89
5.96
0.83
5.77
mA
mA
V
V
V
V
m
V
VF
1.23
1.15
1.10
0.80
4.67
0.75
4.67
SKCD 42 C 060 I HD
Features
ꢀ high current density
ꢀ easy paralleling due to a small forward
voltage spread
ꢀ very soft recovery behavior
ꢀ small switching losses
ꢀ high ruggedness
ꢀ compatible to thick wire bonding
ꢀ compatible to standard solder
processes
V(TO)
rT
V(TO)
rT
Tj = 150 °C
Tj = 175 °C
Tj = 175 °C
m
Dynamic Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Tj = 25 °C, 100 A, 300 V, 1500 A/µs
Err
Err
Qrr
Qrr
Irrm
Irrm
0.78
2.02
4.96
11.1
60
mJ
mJ
µC
µC
A
Tj = 150 °C, 100 A, 300 V, 1500 A/µs
Tj = 25 °C, 100 A, 300 V, 1500 A/µs
Tj = 150 °C, 100 A, 300 V, 1500 A/µs
Tj = 25 °C, 100 A, 300 V, 1500 A/µs
Tj = 150 °C, 100 A, 300 V, 1500 A/µs
Typical Applications*
ꢀ freewheeling diode for IGBT
Footnotes
1) Nominal IGBT IC rating,
90
A
verified by design and characterization
Thermal Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Tj
Tstg
Tsolder
Tsolder
-40
-40
175
175
250
320
°C
°C
°C
°C
10 min.
5 min.
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
6.48 x 6.48
mm2
mm²
41.99
Anode
Cathode
Wire bond
Metallization
Metallization
bondable (Al)
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
Chips /
Package
150 mm wafer on frame
343
pcs
SKCD
© by SEMIKRON
Rev. 0 – 26.06.2013
1