Datasheet > SKCD 56 C 170 I4F

SKCD 56 C 170 I4F

更新时间： 2024-11-15 14:55:35

品牌	Logo	应用领域
赛米控丹佛斯 - SEMIKRON		/
页数	文件大小	规格书
2页	100K
描述
Chips

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SKCD 56 C 170 I4F 数据手册

SKCD 56 C 170 I4F

Absolute Maximum Ratings

Symbol Conditions

Values

Unit

T_j= 25 °C, I_R= 0.085 mA

V_RRM

I_FSM

1700

650

580

T_j= 25 °C

T_j= 150 °C

10 ms

sin 180°

T_j= 150 °C, t_p= 10 ms, sin 180°

i²t

T_jmax

1682

175

A²s

°C

Electrical Characteristics

Symbol Conditions

CAL-DIODE

min.

typ.

max.

Unit

I_F= 100 A ¹⁾

T_c= 80 °C, T_j= 175 °C, F_i=PI/2,

I_F(AV)

I_R

Semitrans Assembly; R_th(j-c)= 0.47 K/W

T_j= 25 °C, V_RRM= 1700 V

T_j= 150 °C, V_RRM= 1700 V

T_j= 25 °C, I_F= 57 A

T_j= 150 °C, I_F= 57 A

T_j= 175 °C, I_F= 57 A

T_j= 150 °C

V_RRM= 1700 V

Size: 7,50 x 7,50 mm²

0.085

25.00

2.04

1.99

1.92

1.22

13.51

1.19

m

V_F

1.71

1.69

1.61

1.08

10.70

1.01

SKCD 56 C 170 I4F

V_(TO)

r_T

V_(TO)

r_T

Features

T_j= 150 °C

T_j= 175 °C

ꢀ max. junction temperature 175 °C

ꢀ low forward voltage drop

ꢀ soft reverse recovery behavior

ꢀ low switching losses

10.53

12.81

m

Dynamic Characteristics

Symbol Conditions

Typical Applications*

ꢀ freewheeling diode for IGBT

min.

typ.

max.

Unit

Footnotes

T_j= 25 °C, 100 A, 1200 V, 2000 A/µs

E_rr

Q_rr

I_rrm

10.1

22.2

31.7

84.1

130

µC

¹⁾Nominal IGBT I_Frating,

T_j= 150 °C, 100 A, 1200 V, 2000 A/µs

T_j= 25 °C, 100 A, 1200 V, 2000 A/µs

T_j= 150 °C, 100 A, 1200 V, 2000 A/µs

T_j= 25 °C, 100 A, 1200 V, 2000 A/µs

T_j= 150 °C, 100 A, 1200 V, 2000 A/µs

verified by design and characterization

Thermal Characteristics

Symbol Conditions

min.

typ.

max.

Unit

T_j

T_stg

T_solder

-40

175

250

320

°C

10 min.

5 min.

Mechanical Characteristics

Symbol Conditions

Values

Unit

Raster

size

Area total

7,50 x 7,50

mm²

Anode

Metallization

bondable (Al)

Cathode

Wire bond

Package

solderable (Ag/Ni)

Al, typ. diameter = 300 µm

150 mm wafer frame

Chips /

Package

254

pcs

SKCD

Rev. 0 – 27.02.2013

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