SKCD 14 C 120 I HD
Absolute Maximum Ratings
Symbol Conditions
Values
Unit
Tj = 25 °C, IR = 0.075 mA
VRRM
IFSM
1200
210
170
145
150
V
A
A
A²s
°C
Tj = 25 °C
Tj = 150 °C
10 ms
sin 180°
Tj = 150 °C, tp = 10 ms, sin 180°
i²t
Tjmax
Electrical Characteristics
Symbol Conditions
CAL-DIODE
min.
typ.
max.
Unit
IF = 20 A 1)
Tc = 80 °C, Tj = 150 °C, Fi=PI/2,
IF(AV)
IR
17
A
Semitrans Assembly; Rth(j-c) = 1.7 K/W
Tj = 25 °C, VRRM = 1200 V
Tj = 125 °C, VRRM = 1200 V
Tj = 25 °C, IF = 15 A
VRRM = 1200 V
Size: 3.74 x 3.74 mm²
0.075
1.50
1.77
1.77
mA
mA
V
V
V
VF
1.50
1.50
0.92
35.2
SKCD 14 C 120 I HD
Tj = 125 °C, IF = 15 A
Tj = 125 °C
Tj = 125 °C
V(TO)
rT
m
Features
ꢀ high current density
ꢀ easy paralleling due to a small forward
voltage spread
Dynamic Characteristics
Symbol Conditions
min.
typ.
max.
Unit
ꢀ positive temperature coefficient
ꢀ very soft recovery behavior
ꢀ small switching losses
ꢀ high ruggedness
ꢀ compatible to thick wire bonding
ꢀ compatible to standard solder
processes
Tj = 25 °C, 20 A, 600 V, 400 A/µs
Err
Err
Qrr
Qrr
Irrm
Irrm
0.7
1.3
2.2
4
14
19
mJ
mJ
µC
µC
A
Tj = 125 °C, 20 A, 600 V, 400 A/µs
Tj = 25 °C, 20 A, 600 V, 400 A/µs
Tj = 125 °C, 20 A, 600, 400 A/µs
Tj = 25 °C, 20 A, 600 V, 400 A/µs
Tj = 125 °C, 20 A, 600, 400 A/µs
A
Typical Applications*
ꢀ freewheeling diode for IGBT
ꢀ particularly suitable for frequencies < 8
kHz
Thermal Characteristics
Symbol Conditions
min.
typ.
max.
Unit
Footnotes
Tj
Tstg
Tsolder
Tsolder
-40
-40
150
150
250
320
°C
°C
°C
°C
1) Nominal IGBT IF rating,
verified by design and characterization
10 min.
5 min.
Mechanical Characteristics
Symbol Conditions
Values
Unit
Raster
size
Area total
Anode
3.74 x 3.74
mm2
mm²
13.99
bondable (Al)
Cathode
Wire bond
Package
solderable (Ag/Ni)
Al, diameter ≤ 500 µm
150 mm wafer frame
Chips /
Package
1070
pcs
SKCD
© by SEMIKRON
Rev. 0 – 29.11.2012
1