Datasheet > 晶体管 > IGBT> SKB06N60HS

SKB06N60HS

更新时间： 2024-11-05 03:31:51

品牌	Logo	应用领域
英飞凌 - INFINEON		双极性晶体管
页数	文件大小	规格书
14页	356K
描述
High Speed IGBT in NPT-technology

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中文翻译

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数据手册

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SKB06N60HS 数据手册

SKB06N60HS

High Speed IGBT in NPT-technology

• 30% lower E_offcompared to previous generation

• Short circuit withstand time – 10 µs

• Designed for operation above 30 kHz

• NPT-Technology for 600V applications offers:

- parallel switching capability

P-TO-220-3-45

- moderate E_offincrease with temperature

- very tight parameter distribution

•

High ruggedness, temperature stable behaviour

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC¹for target applications

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V_CE

I_C

T_j

Marking

Package

E_off

K06N60HS

SKB06N60HS

Maximum Ratings

Parameter

600V

80µJ

P-TO-220-3-45

150°C

Symbol

Value

Unit

Collector-emitter voltage

DC collector current

T_C= 25°C

V_CE

I_C

600

T_C= 100°C

Pulsed collector current, t_plimited by T_jmax

Turn off safe operating area

I_{Cpul s}

V_CE≤ 600V, T_j≤ 150°C

Diode forward current

T_C= 25°C

I_F

T_C= 100°C

Diode pulsed current, t_plimited by T_jmax

Gate-emitter voltage static

I_{Fpul s}

V_{G E}

±20

±30

transient (t_p<1µs, D<0.05)

Short circuit withstand time²⁾

t_SC

µs

V_GE= 15V, V_CC≤ 400V, T_j≤ 150°C

Power dissipation

P_{t ot}

T_C= 25°C

Operating junction and storage temperature

T_j,

-55...+150

°C

T_stg

Time limited operating junction temperature for t < 150h

Soldering temperature (reflow soldering, MSL1)

T_j(tl)

175

220

¹J-STD-020 and JESD-022

²⁾Allowed number of short circuits: <1000; time between short circuits: >1s.

Rev. 2.2 June 06

Power Semiconductors

12 3 4 5 6 7...14

中文翻译

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SKB06N60HS_07	INFINEON	获取价格	High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
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