Datasheet > SIZ300DT_12

SIZ300DT_12

更新时间： 2024-09-30 11:59:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
14页	330K
描述
Dual N-Channel 30 V (D-S) MOSFETs

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SIZ300DT_12 数据手册

New Product

SiZ300DT

Vishay Siliconix

Dual N-Channel 30 V (D-S) MOSFETs

FEATURES

PRODUCT SUMMARY

•

PowerPAIR Optimizes High-Side and Low-Side

V_DS(V)

R_DS(on)()

Q_g(Typ.)

MOSFETs for Synchronous Buck Converters

TrenchFET^®Power Mosfets

_D(A)^a

•

0.0240 at V_GS= 10 V

0.0320 at V_GS= 4.5 V

0.0110 at V_GS= 10 V

0.0165 at V_GS= 4.5 V

Channel-1

Channel-2

3.5 nC

100 % R_gand UIS Tested

• Material categorization: For definitions of

6.8 nC

compliance please see www.vishay.com/doc?99912

APPLICATIONS

•

Computing System Power

POL

PowerPAIR^®3 x 3

Pin 1

Synchronous Buck Converter

G₁

D₁

S₁/D₂

(Pin 9)

G₂

N-Channel 1

S /D

1 2

S₂

MOSFET

S₂

N-Channel 2

MOSFET

Ordering Information:

SiZ300DT-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Channel-1

Channel-2

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

11^a

28^a

T_C= 25 °C

_C= 70 °C

I_D

Continuous Drain Current (T_J= 150 °C)

9.8^{b, c}

14.9^{b, c}

T_A= 25 °C

T_A= 70 °C

7.8^{b, c}

11^a

3.2^{b, c}

11.9^{b, c}

I_DM

Pulsed Drain Current (t = 300 µs)

T_A= 25 °C

3.8^{b, c}

Continuous Source Drain Diode Current

I_AS

Avalanche Current

L = 0.1 mH

E_AS

4.2^{b, c}

2.7^{b, c}

Single Pulse Avalanche Energy

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

16.7

10.7

3.7^{b, c}

2.4^{b, c}

P_D

Maximum Power Dissipation

T_J, T_stg

- 55 to 150

260

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

°C

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not

plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required

to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

Document Number: 67715

S12-1361-Rev. D, 11-Jun-12

For technical questions, contact: pmostechsupport@vishay.com

This document is subject to change without notice.

www.vishay.com

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SIZ300DT_12相关器件

型号	品牌	获取价格	描述	数据表
SIZ300DT-T1-GE3	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SiZ320DT	VISHAY	获取价格	Dual N-Channel 25 V (D-S) MOSFETs
SiZ322DT	VISHAY	获取价格	Dual N-Channel 25 V (D-S) MOSFET
SiZ328DT	VISHAY	获取价格	Dual N-Channel 25 V (D-S) MOSFETs
SiZ340ADT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SiZ340BDT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SiZ342ADT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SiZ342BDT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFET
SiZ342DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SiZ346DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs

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