Datasheet > SiZ256DT

SiZ256DT

更新时间： 2024-10-01 14:55:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
14页	353K
描述
Dual N-Channel 70 V (D-S) MOSFETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SiZ256DT 数据手册

SiZ256DT

Vishay Siliconix

www.vishay.com

Dual N-Channel 70 V (D-S) MOSFETs

FEATURES

• TrenchFET^®Gen IV power MOSFETs

PowerPAIR^®3 x 3S

G₂

S₂

• 100 % R_gand UIS tested

• Integrated MOSFET half bridge power stage

D₁

• Optimized Q_gs/Q_gsratio improves switching

characteristics

G₁

D₁

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Top View

D₁

Bottom View

APPLICATIONS

• POL

PRODUCT SUMMARY

CHANNEL-1 CHANNEL-2

V_DS(V)

• Synchronous buck converter

• Telecom DC/DC

• Resonant converters

• Motor drive control

N-Channel 1

MOSFET

R_DS(on)max. () at V_GS= 4.5 V

0.0176

0.0200

8.2

0.0176

0.0200

8.2

S /D

R_DS(on)max. () at V_GS= 3.3 V

Q_gtyp. (nC)

_D(A) ^a

31.8

N-Channel 2

MOSFET

Configuration

Dual

ORDERING INFORMATION

Package

PowerPAIR 3 x 3S

SiZ256DT-T1-GE3

Lead (Pb)-free and halogen-free

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

CHANNEL-1

CHANNEL-2

31.8 ^a

25.4

11.5 ^{b, c}

9.2 ^{b, c}

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

31.8 ^a

25.4

11.5 ^{b, c}

9.2 ^{b, c}

3.6 ^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (100 μs pulse width)

Continuous source drain diode current

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

3.6 ^{b, c}

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

7.2

4.3 ^{b, c}

2.8 ^{b, c}

7.2

4.3 ^{b, c}

2.8 ^{b, c}

L = 0.1 mH

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

CHANNEL-1

CHANNEL-2

PARAMETER

SYMBOL

UNIT

TYP.

MAX.

TYP.

MAX.

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

t  10 s

Steady state

R_thJA

R_thJC

°C/W

3.8

Notes

a. T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAIR 3 x 3S is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 64 °C/W for channel-1 and 64 °C/W for channel-2

S20-0816-Rev. A, 26-Oct-2020

Document Number: 79711

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...14

中文翻译

下载PDF

与SiZ256DT相关器件

型号	品牌	获取价格	描述	数据表
SiZ260DT	VISHAY	获取价格	Dual N-Channel 80 V (D-S) MOSFETs
SiZ270DT	VISHAY	获取价格	Dual N-Channel 100 V (D-S) MOSFETs
SIZ300DT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ300DT_12	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SIZ300DT-T1-GE3	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SiZ320DT	VISHAY	获取价格	Dual N-Channel 25 V (D-S) MOSFETs
SiZ322DT	VISHAY	获取价格	Dual N-Channel 25 V (D-S) MOSFET
SiZ328DT	VISHAY	获取价格	Dual N-Channel 25 V (D-S) MOSFETs
SiZ340ADT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs
SiZ340BDT	VISHAY	获取价格	Dual N-Channel 30 V (D-S) MOSFETs

与SiZ256DT相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

31
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

27
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

26
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

37

产品中心

服务支持

精选活动

关于我们

帮助中心

SiZ256DT

SiZ256DT 数据手册

与SiZ256DT相关器件

与SiZ256DT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SiZ256DT

SiZ256DT 数据手册

与SiZ256DT相关器件

与SiZ256DT相关文章

您还可以找

您在本页遇到什么问题？