Datasheet > SiS322DNT

SiS322DNT

更新时间： 2024-11-26 14:55:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	224K
描述
N-Channel 30 V (D-S) MOSFET

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SiS322DNT 数据手册

SiS322DNT

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

PowerPAK^®1212-8S

• TrenchFET^®Gen IV power MOSFET

• 100 % R_gand UIS tested

• Thin 0.75 mm height

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

Top View

Bottom View

• Switch mode power supplies

• Personal computers and servers

• Telecom bricks

PRODUCT SUMMARY

V_DS(V)

• VRM’s and POL

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

0.0075

0.0120

6.9

38.3 ^f

Single

Q_gtyp. (nC)

_D(A)

Configuration

N-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK 1212-8S

SiS322DNT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

UNIT

V_DS

V_GS

+20, -16

38.3

30.6

15.3 ^{a, b}

12.1 ^{a, b}

T_C= 25 °C

_C= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

2.9 ^{a, b}

Continuous source-drain diode current

T_A= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

19.8

L = 0.1 mH

T_C= 25 °C

_C= 70 °C

_A= 25 °C

T_A= 70 °C

12.7

3.2 ^{a, b}

3 ^{a, b}

Maximum power dissipation

P_D

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{c, d}

T_J, T_stg

-55 to +150

260

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{a, e}

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

6.3

°C/W

Maximum junction-to-case (drain)

Notes

a. Surface mounted on 1" x 1" FR4 board

b. t = 10 s

c. See solder profile (www.vishay.com/doc?73257). The Thin PowerPAK 1212-8S is a leadless package. The end of the lead terminal is

exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be

guaranteed and is not required to ensure adequate bottom side solder interconnection

d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

e. Maximum under steady state conditions is 81 °C/W

f. Based on T_C= 25 °C

S17-1448-Rev. B, 18-Sep-17

Document Number: 63569

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiS322DNT相关器件

型号	品牌	获取价格	描述	数据表
SIS330DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS330DN-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS332DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS332DN-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS334DN	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS334DN-T1-GE3	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIS376DN	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
SIS376DN-T1-GE3	VISHAY	获取价格	N-Channel 20 V (D-S) MOSFET
SIS402DN	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET
SIS402DN_09	VISHAY	获取价格	N-Channel 30-V (D-S) MOSFET

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