Datasheet > SiS415DNT

SiS415DNT

更新时间： 2024-10-15 14:53:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	230K
描述
P-Channel 20 V (D-S) MOSFET

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SiS415DNT 数据手册

SiS415DNT

Vishay Siliconix

www.vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen III P-channel power MOSFET

PowerPAK^®1212-8S

• Thin 0.8 mm maximum height

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Smart phones, tablet PCs, and

Top View

Bottom View

mobile computing

- Battery switch

- Load switch

- Power management

PRODUCT SUMMARY

V_DS(V)

-20

_DS(on)max. () at V_GS= -10 V

_DS(on)max. () at V_GS= -4.5 V

0.0040

0.0055

0.0095

55.5

R_DS(on)max. () at V_GS= -2.5 V

Q_gtyp. (nC)

I_D(A)

-35 ^a

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

Lead (Pb)-free and halogen-free

PowerPAK 1212-8S

SiS415DNT-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

-20

UNIT

V_DS

V_GS

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

-35 ^a

-22.6 ^{b, c}

-18.2 ^{b, c}

-80

-35 ^a

-3.3 ^{b, c}

-20

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 300 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

Avalanche current

Single pulse avalanche energy

I_AS

E_AS

L = 0.1 mH

_C= 25 °C

_C= 70 °C

Maximum power dissipation

P_D



T_A= 25 °C

T_A= 70 °C

3.7 ^{b, c}

2.4 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{b, f}

Maximum junction-to-case (drain)

SYMBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

t  10 s

Steady state

1.9

2.4

°C/W

Notes

a. Package limited

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8S is a leadless package. The end of the lead terminal is exposed

copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed

and is not required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 81 °C/W

S17-1449-Rev. B, 18-Sep-17

Document Number: 63684

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiS415DNT相关器件

型号	品牌	获取价格	描述	数据表
SIS424DN	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SIS424DN-T1-GE3	VISHAY	获取价格	MOSFET N-CH D-S 20V PPAK 1212-8
SIS426DN	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
SIS426DN-T1-GE3	VISHAY	获取价格	N-Channel 20-V (D-S) MOSFET
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SIS43-101	ETC	获取价格	Small Size, Low Profile SMD type

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