SiS434DN
Vishay Siliconix
N-Channel 40-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
35
Definition
TrenchFET® Power MOSFET
100 % Rg Tested
0.0076 at VGS = 10 V
0.0092 at VGS = 4.5 V
•
•
40
12.5 nC
35
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
®
PowerPAK 1212-8
APPLICATIONS
S
•
POL
3.30 mm
3.30 mm
D
1
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
S
Bottom View
Ordering Information: SiS434DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
Limit
40
Unit
V
20
35a
35a
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
ID
17.6b, c
14.1b, c
60
A
Pulsed Drain Current
Avalanche Current
Avalanche Energy
IDM
IAS
EAS
30
45
35a
3.2b, c
52
L = 0.1 mH
mJ
A
T
T
C = 25 °C
A = 25 °C
Continuous Source-Drain Diode Current
IS
TC = 25 °C
C = 70 °C
T
33
Maximum Power Dissipation
PD
W
3.8b, c
2b, c
TA = 25 °C
TA = 70 °C
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
RthJC
Typical
24
Maximum
Unit
t ≤ 10 s
Steady State
33
°C/W
1.9
2.4
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 81 °C/W.
Document Number: 65024
S09-1091-Rev. A, 15-Jun-09
www.vishay.com
1