5秒后页面跳转
SIRA00DP PDF预览

SIRA00DP

更新时间: 2024-11-24 12:21:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 513K
描述
N-Channel 30 V (D-S) MOSFET

SIRA00DP 数据手册

 浏览型号SIRA00DP的Datasheet PDF文件第2页浏览型号SIRA00DP的Datasheet PDF文件第3页浏览型号SIRA00DP的Datasheet PDF文件第4页浏览型号SIRA00DP的Datasheet PDF文件第5页浏览型号SIRA00DP的Datasheet PDF文件第6页浏览型号SIRA00DP的Datasheet PDF文件第7页 
New Product  
SiRA00DP  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) () (Max.)  
0.00100 at VGS = 10 V  
0.00135 at VGS = 4.5 V  
Qg (Typ.)  
I
D (A)a, g  
60  
Definition  
TrenchFET® Gen IV Power MOSFET  
100 % Rg and UIS Tested  
30  
66 nC  
60  
Compliant to RoHS Directive 2002/95/EC  
PowerPAK® SO-8  
APPLICATIONS  
Synchronous Rectification  
ORing  
D
S
5.15 mm  
6.15 mm  
1
S
High Power Density DC/DC  
VRMs and Embedded DC/DC  
2
S
3
G
4
G
D
8
D
7
D
6
D
5
S
Bottom View  
N-Channel MOSFET  
Ordering Information:  
SiRA00DP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
+ 20, - 16  
60g  
60g  
58b, c  
47b, c  
120  
60g  
5.6b, c  
50  
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
TC = 25 °C  
Continuous Source-Drain Diode Current  
TA = 25 °C  
L =0.1 mH  
TC = 25 °C  
IAS  
Single Pulse Avalanche Current  
Single Pulse Avalanche Energy  
EAS  
mJ  
W
125  
104  
T
C = 70 °C  
A = 25 °C  
66.6  
PD  
Maximum Power Dissipation  
6.25b, c  
4b, c  
T
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
- 55 to 150  
260  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambientb, f  
Maximum Junction-to-Case (Drain)  
Symbol  
RthJA  
Typical  
Maximum  
Unit  
t 10 s  
15  
20  
°C/W  
Steady State  
RthJC  
0.9  
1.2  
Notes:  
a. Based on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 54 °C/W.  
g. Package limited.  
Document Number: 63780  
S12-0305-Rev. A, 13-Feb-12  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SIRA00DP相关器件

型号 品牌 获取价格 描述 数据表
SiRA01DP VISHAY

获取价格

P-Channel 30 V (D-S) MOSFET
SIRA02DP VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIRA04DP VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SiRA06DDP VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIRA06DP VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SiRA10BDP VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIRA10BDP-T1-GE3 VISHAY

获取价格

MOSFET N-CHAN 30V
SiRA10DDP VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIRA10DP VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SIRA10DP-T1-GE3 VISHAY

获取价格

MOSFET N-CH 30V 30A SO-8