Datasheet > SIRA12DP

SIRA12DP

更新时间： 2024-11-21 12:21:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	526K
描述
N-Channel 30 V (D-S) MOSFET

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SIRA12DP 数据手册

New Product

SiRA12DP

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)() (Max.)

0.0043 at V_GS= 10 V

0.0060 at V_GS= 4.5 V

Q_g(Typ.)

_D(A)^{a, g}

Definition

•

TrenchFET^®Gen IV Power MOSFET

100 % R_gand UIS Tested

13.6 nC

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

• High Power Density DC/DC

PowerPAK^®SO-8

•

Synchronous Rectification

VRMs and Embedded DC/DC

5.15 mm

6.15 mm

N-Channel MOSFET

Bottom View

Ordering Information:

SiRA12DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

+ 20, - 16

25^g

25^{b, c, g}

20^{b, c}

25^g

3.8^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

L =0.1 mH

T_C= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

E_AS

4.5^{b, c}

2.9^{b, c}

T_C= 70 °C

P_D

Maximum Power Dissipation

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t  10 s

°C/W

Steady State

R_thJC

3.2

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. Package limited.

Document Number: 63786

S12-0310-Rev. A, 13-Feb-12

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SIRA12DP相关器件

型号	品牌	获取价格	描述	数据表
SIRA12DP-T1-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SiRA14BDP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIRA14DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIRA14DP-T1-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SiRA16DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18ADP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18BDP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA20BDP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SiRA20DP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET

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