Datasheet > SIRA14DP

SIRA14DP

更新时间： 2024-11-21 12:21:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	513K
描述
N-Channel 30 V (D-S) MOSFET

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SIRA14DP 数据手册

New Product

SiRA14DP

Vishay Siliconix

N-Channel 30 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

TrenchFET^®Gen IV Power MOSFET

V_DS(V)

R_DS(on)() Max.

0.00510 at V_GS= 10 V

0.00850 at V_GS= 4.5 V

Q_g(Typ.)

_D(A)^{a, g}

100 % R_gand UIS Tested

Material categorization:

9.4 nC

For definitions of compliance please see

www.vishay.com/doc?99912

PowerPAK^®SO-8

APPLICATIONS

•

High Power Density DC/DC

Synchronous Rectification

Embedded DC/DC

5.15 mm

6.15 mm

Bottom View

Ordering Information:

SiRA14DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

+ 20, - 16

20^g

19.8^{b, c}

15.8^{b, c}

14.1^g

3.2^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Drain Current (T_J= 150 °C)

I_D

I_DM

I_S

Pulsed Drain Current (t = 300 µs)

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

L =0.1 mH

E_AS

11.25

15.6

3.6^{b, c}

2.3^{b, c}

T_C= 25 °C

T_C= 70 °C

P_D

Maximum Power Dissipation

T_A= 25 °C

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

Symbol

R_thJA

Typical

Maximum

Unit

t  10 s

°C/W

Steady State

R_thJC

6.4

Notes:

a. Based on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. Package limited.

Document Number: 63784

S12-0547-Rev. A, 12-Mar-12

www.vishay.com

For more information please contact: pmostechsupport@vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SIRA14DP相关器件

型号	品牌	获取价格	描述	数据表
SIRA14DP-T1-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SiRA16DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18ADP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18BDP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA20BDP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SiRA20DP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SiRA22DP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SiRA24DP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET
SIRA24DP-T1-GE3	VISHAY	获取价格	Power Field-Effect Transistor,

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