Datasheet > SiRA12CDP

SiRA12CDP

更新时间： 2024-11-22 14:55:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	192K
描述
N-Channel 30 V (D-S) MOSFET

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SiRA12CDP 数据手册

SiRA12CDP

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®SO-8 Single

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• High power density DC/DC

• Synchronous rectification

• Power conversion

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

• Load switch

_DS(on)max. () at V_GS= 10 V

_DS(on)max. () at V_GS= 4.5 V

0.0033

0.0055

9.5

Q_gtyp. (nC)

_D(A) ^a

Configuration

N-Channel MOSFET

76.4

Single

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiRA12CDP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

UNIT

V_DS

V_GS

+20, -16

76.4

61.4

24.8 ^{b, c}

21.1 ^{b, c}

150

T_C= 25 °C

_C= 70 °C

Continuous drain current (T_J= 150 °C)

I_D

T_A= 25 °C

T_A= 70 °C

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

3.3 ^{b, c}

Continuous source-drain diode current

T_A= 25 °C

L = 0.3 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

34.7

22.2

T_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

3.6 ^{b, c}

2.3 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SMYBOL

R_thJA

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient ^{b, f}

t  10 s

Steady state

°C/W

Maximum junction-to-case (drain)

R_thJC

2.8

3.6

Notes

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 70 °C/W

S22-1037-Rev. A, 19-Dec-2022

Document Number: 62156

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SiRA12CDP相关器件

型号	品牌	获取价格	描述	数据表
SIRA12DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIRA12DP-T1-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SiRA14BDP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIRA14DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIRA14DP-T1-GE3	VISHAY	获取价格	TRANSISTOR POWER, FET, FET General Purpose Power
SiRA16DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18ADP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18BDP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA18DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SiRA20BDP	VISHAY	获取价格	N-Channel 25 V (D-S) MOSFET

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