Datasheet > SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

更新时间： 2024-11-21 22:56:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	418K
描述
MOSFET N-CHAN 30V

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SIRA10BDP-T1-GE3 数据手册

SiRA10BDP

Vishay Siliconix

www.vishay.com

N-Channel 30 V (D-S) MOSFET

FEATURES

• TrenchFET^®Gen IV power MOSFET

PowerPAK^®SO-8 Single

• 100 % R_gand UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• High power density DC/DC

• Synchronous rectification

Top View

Bottom View

PRODUCT SUMMARY

V_DS(V)

• VRMs and embedded DC/DC

_DS(on)max. () at V_GS= 10 V

0.0036

0.0050

11.7

R_DS(on)max. () at V_GS= 4.5 V

Q_gtyp. (nC)

_D(A)

60 ^{a, g}

N-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

PowerPAK SO-8

Lead (Pb)-free and halogen-free

SiRA10BDP-T1-GE3

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

+20, -16

60 ^g

UNIT

V_DS

V_GS

T_C= 25 °C

_C= 70 °C

T_A= 25 °C

T_A= 70 °C

60 ^g

Continuous drain current (T_J= 150 °C)

I_D

30 ^{b, c}

24 ^{b, c}

150

4.6 ^{b, c}

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

L = 0.1 mH

T_C= 25 °C

Single pulse avalanche current

Single pulse avalanche energy

I_AS

E_AS

T_C= 70 °C

Maximum power dissipation

P_D

T_A= 25 °C

T_A= 70 °C

5 ^{b, c}

3.2 ^{b, c}

-55 to +150

260

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^{d, e}

T_J, T_stg

°C

THERMAL RESISTANCE RATINGS

PARAMETER

SMYBOL

R_thJA

R_thJC

TYPICAL

MAXIMUM

UNIT

Maximum junction-to-ambient ^{b, f}

t  10 s

Steady state

2.3

2.9

°C/W

Maximum junction-to-case (drain)

Notes

a. Based on T_C= 25 °C

b. Surface mounted on 1" x 1" FR4 board

c. t = 10 s

d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components

f. Maximum under steady state conditions is 70 °C/W

g. Package limited

S18-0315-Rev. A, 19-Mar-18

Document Number: 76396

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...13

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与SIRA10BDP-T1-GE3相关器件

型号	品牌	获取价格	描述	数据表
SiRA10DDP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIRA10DP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
SIRA10DP-T1-GE3	VISHAY	获取价格	MOSFET N-CH 30V 30A SO-8
SiRA12BDP	VISHAY	获取价格	N-Channel 30 V (D-S) MOSFET
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