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SIR172ADP-T1-GE3

更新时间： 2024-09-16 19:53:27
品牌 Logo 应用领域
威世 - VISHAY 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 330K
描述
Power Field-Effect Transistor, 24A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8

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SIR172ADP-T1-GE3 技术参数

是否Rohs认证： 符合生命周期：Not Recommended
包装说明：HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, POWERPAK, SOP-8Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：12 weeks
风险等级：8.51Samacsys Description：MOSFET 30V Vds 20V Vgs PowerPAK SO-8
雪崩能效等级（Eas）：5 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：30 V
最大漏极电流 (Abs) (ID)：24 A最大漏极电流 (ID)：24 A
最大漏源导通电阻：0.0085 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F5元件数量：1
端子数量：5工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：29.8 W最大脉冲漏极电流 (IDM)：60 A
子类别：FET General Purpose Powers表面贴装：YES
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

SIR172ADP-T1-GE3 数据手册

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SiR172ADP  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
•
•
TrenchFET® Power MOSFET  
Low Thermal Resistance PowerPAK® Package  
with Low 1.07 mm Profile  
Optimized for High-Side Synchronous Rectifier  
Operation  
VDS (V)  
RDS(on) () Max.  
0.0085 at VGS = 10 V  
0.0105 at VGS = 4.5 V  
Qg (Typ.)  
I
D (A)a, g  
24  
30  
12.8 nC  
•
24  
•
•
100 % Rg and UIS Tested  
Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
PowerPAK SO-8  
S
APPLICATIONS  
• Notebook CPU Core  
- High-Side Switch  
6.15 mm  
5.15 mm  
1
D
S
2
S
3
G
4
D
8
D
7
G
D
6
D
5
Bottom View  
S
Ordering Information:  
SiR172ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
20  
24g  
24g  
16.1b, c  
T
C = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
12.9b, c  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
60  
24g  
3.5b, c  
TC = 25 °C  
TA = 25 °C  
Continuous Source-Drain Diode Current  
IAS  
Single Pulse Avalanche Current  
Avalanche Energy  
10  
L = 0.1 mH  
EAS  
5
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
29.8  
19  
3.9b, c  
2.5b, c  
- 55 to 150  
260  
PD  
Maximum Power Dissipation  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)d, e  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
Maximum Junction-to-Ambientb, f  
RthJA  
t 10 s  
27  
32  
°C/W  
RthJC  
Maximum Junction-to-Case (Drain)  
Steady State  
3.5  
4.2  
Notes:  
a. Base on TC = 25 °C.  
b. Surface mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection.  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.  
f. Maximum under steady state conditions is 70 °C/W.  
g. Package limited.  
Document Number: 62609  
S12-2052-Rev.B, 27-Aug-12  
For technical questions, contact: pmostechsupport@vishay.com  
This document is subject to change without notice.  
www.vishay.com  
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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