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SiR178DP PDF预览

SiR178DP

更新时间: 2024-11-10 14:52:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 255K
描述
N-Channel 20 V (D-S) MOSFET

SiR178DP 数据手册

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SiR178DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 20 V (D-S) MOSFET  
FEATURES  
• TrenchFET® Gen IV power MOSFET  
PowerPAK® SO-8 Single  
D
D
7
8
D
6
• Very low RDS x Qg figure-of-merit (FOM)  
D
5
• Leadership RDS(ON) minimizes power loss  
from conduction  
• 2.5 V ratings and operation at low voltage  
gate drive  
1
2
S
S
• 100 % Rg and UIS tested  
3
S
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
4
G
1
Top View  
Bottom View  
APPLICATIONS  
• Battery management  
D
PRODUCT SUMMARY  
VDS (V)  
20  
• DC/DC converters  
RDS(on) max. () at VGS = 10 V  
RDS(on) max. () at VGS = 4.5 V  
RDS(on) max. () at VGS = 2.5 V  
Qg typ. (nC)  
0.0004  
0.0005  
0.0012  
95  
• Load switch  
G
I
D (A) a  
430  
S
Configuration  
Single  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
PowerPAK SO-8  
Lead (Pb)-free and halogen-free  
SiR178DP-T1-RE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
20  
-8 / +12  
430  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
V
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
345  
Continuous drain current (TJ = 150 °C)  
ID  
100 b, c  
84.5 b, c  
500  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
94.5  
5.6 b, c  
80  
320  
104  
67  
6.3 b, c  
4 b, c  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Maximum power dissipation  
PD  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
-55 to +150  
260  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
15  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
20  
1.2  
°C/W  
Maximum junction-to-case (drain)  
0.9  
Notes  
a. TC = 25 °C  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper  
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not  
required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 54 °C/W  
S20-0381-Rev. A, 25-May-2020  
Document Number: 77598  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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