5秒后页面跳转
SiR186DP PDF预览

SiR186DP

更新时间: 2023-12-06 20:02:22
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
13页 392K
描述
N-Channel 60 V (D-S) MOSFET

SiR186DP 数据手册

 浏览型号SiR186DP的Datasheet PDF文件第2页浏览型号SiR186DP的Datasheet PDF文件第3页浏览型号SiR186DP的Datasheet PDF文件第4页浏览型号SiR186DP的Datasheet PDF文件第5页浏览型号SiR186DP的Datasheet PDF文件第6页浏览型号SiR186DP的Datasheet PDF文件第7页 
SiR186DP  
Vishay Siliconix  
www.vishay.com  
N-Channel 60 V (D-S) MOSFET  
FEATURES  
PowerPAK® SO-8 Single  
• TrenchFET® Gen IV power MOSFET  
• Very low RDS - Qg figure-of-merit (FOM)  
• Tuned for the lowest RDS - Qoss FOM  
• 100 % Rg and UIS tested  
D
D
7
8
D
6
D
5
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
1
S
2
3
S
4
G
S
1
APPLICATIONS  
D
Top View  
Bottom View  
• Synchronous rectification  
• Primary side switch  
PRODUCT SUMMARY  
VDS (V)  
60  
• DC/DC converter  
G
R
DS(on) max. (Ω) at VGS = 10 V  
RDS(on) max. (Ω) at VGS = 7.5 V  
DS(on) max. (Ω) at VGS = 6 V  
0.0045  
0.0054  
0.0078  
15.5  
• Motor drive switch  
R
S
Qg typ. (nC)  
ID (A)  
60 a, g  
N-Channel MOSFET  
Configuration  
Single  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and halogen-free  
PowerPAK SO-8 Single  
SiR186DP-T1-RE3  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
60  
20  
60 a  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
VGS  
V
TC = 25 °C  
C = 70 °C  
TA = 25 °C  
TA = 70 °C  
T
60 a  
Continuous drain current (TJ = 150 °C)  
ID  
23 b, c  
18.4 b, c  
150  
A
Pulsed drain current (t = 100 μs)  
IDM  
IS  
TC = 25 °C  
TA = 25 °C  
51.8  
4.5 b, c  
Continuous source-drain diode current  
Single pulse avalanche current  
Single pulse avalanche energy  
IAS  
EAS  
25  
31.25  
57  
L = 0.1 mH  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
36  
Maximum power dissipation  
PD  
5 b, c  
3.2 b, c  
-55 to +150  
260  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum junction-to-ambient b  
SYMBOL  
RthJA  
RthJC  
TYPICAL  
20  
MAXIMUM  
UNIT  
t 10 s  
Steady state  
25  
2.2  
°C/W  
Maximum junction-to-case (drain)  
1.7  
Notes  
a. Package limited  
b. Surface mounted on 1" x 1" FR4 board  
c. t = 10 s  
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed  
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed  
and is not required to ensure adequate bottom side solder interconnection  
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components  
f. Maximum under steady state conditions is 70 °C/W  
g. TC = 25 °C  
S17-0669-Rev. A, 15-May-17  
Document Number: 75426  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SiR186DP相关器件

型号 品牌 描述 获取价格 数据表
SiR186LDP VISHAY N-Channel 60 V (D-S) MOSFET

获取价格

SiR188DP VISHAY N-Channel 60 V (D-S) MOSFET

获取价格

SiR188LDP VISHAY N-Channel 60 V (D-S) MOSFET

获取价格

SIR19-21C EVERLIGHT 0.8mm Height Flat Top Infrared LED

获取价格

SIR19-21C/TR8 EVERLIGHT 0.8mm Height Flat Top Infrared LED

获取价格

SIR19-21C-TR8 EVERLIGHT 0.8mm Height Flat Top Infrared LED

获取价格