Datasheet > SiR186DP

SiR186DP

更新时间： 2023-12-06 20:02:22

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	392K
描述
N-Channel 60 V (D-S) MOSFET

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SiR186DP 数据手册

SiR186DP

Vishay Siliconix

www.vishay.com

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Axis Title

150

120

10000

1000

100

120

10000

1000

100

V_GS= 10 V thru 7 V

V_GS= 6 V

T_C= 25 °C

V_GS= 5 V

T_C= 125 °C

T_C= -55 °C

V_GS= 4 V

2.0

0.0

0.5

1.0

1.5

2.5

V_DS- Drain-to-Source Voltage (V)

2nd line

V_GS- Gate-to-Source Voltage (V)

2nd line

Output Characteristics

Transfer Characteristics

Axis Title

V_GS= 6 V

Axis Title

C_iss

0.010

0.008

0.006

0.004

0.002

10000

1000

100

2000

1600

1200

800

400

10000

1000

100

V_GS= 7.5 V

V_GS= 10 V

C_oss

C_rss

100

I_D- Drain Current (A)

2nd line

V_DS- Drain-to-Source Voltage (V)

2nd line

On-Resistance vs. Drain Current and Gate Voltage

Capacitance

Axis Title

10000

1000

100

2.0

1.7

1.4

1.1

0.8

0.5

10000

1000

100

I_D= 15 A

I_D= 10 A

V_GS= 10 V, 7.5 V

V_DS= 10 V, 30 V, 40 V

V_GS= 6 V

-50 -25

75 100 125 150

Q_g- Total Gate Charge (nC)

2nd line

T_J- Junction Temperature (°C)

2nd line

Gate Charge

On-Resistance vs. Junction Temperature

S17-0669-Rev. A, 15-May-17

Document Number: 75426

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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