Datasheet > SIR172DP

SIR172DP

更新时间： 2024-09-16 11:57:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	491K
描述
N-Channel 30-V (D-S) MOSFET

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SIR172DP 数据手册

SiR172DP

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Definition

V_DS(V)

R_DS(on)()

Q_g(Typ.)

_D(A)^{a, g}

•

TrenchFET^®Power MOSFET

0.0089 at V_GS= 10 V

0.0124 at V_GS= 4.5 V

Low Thermal Resistance PowerPAK^®Package

with Low 1.07 mm Profile

9.8 nC

•

Optimized for High-Side Synchronous Rectifier

Operation

PowerPAK SO-8

•

100 % R_gand UIS Tested

Compliant to RoHS Directive 2002/95/EC

6.15 mm

APPLICATIONS

5.15 mm

•

Notebook CPU Core

- High-Side Switch

Bottom View

Ordering Information: SiR172DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Symbol

V_DS

Limit

Unit

V_GS

20^g

T_C= 25 °C

_C= 70 °C

20^g

Continuous Drain Current (T_J= 150 °C)

I_D

16.1^{b, c}

12.9^{b, c}

20^g

3.2^{b, c}

T_A= 25 °C

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

Continuous Source-Drain Diode Current

T_A= 25 °C

I_AS

Single Pulse Avalanche Current

Avalanche Energy

L = 0.1 mH

E_AS

_C= 25 °C

_C= 70 °C

_A= 25 °C

29.8

3.9^{b, c}

2.5^{b, c}

P_D

Maximum Power Dissipation

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)^{d, e}

- 55 to 150

260

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{b, f}

Maximum Junction-to-Case (Drain)

R_thJA

t  10 s

Steady State

°C/W

R_thJC

3.5

4.2

Notes:

a. Base on T_C= 25 °C.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

g. Package limited.

Document Number: 65271

S11-1647-Rev. B, 22-Aug-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与SIR172DP相关器件

型号	品牌	获取价格	描述	数据表
SIR172DP-T1-GE3	VISHAY	获取价格	TRANSISTOR 16.1 A, 30 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET, HALOGEN FREE AND ROHS C
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SiR182LDP	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
SiR184DP	VISHAY	获取价格	N-Channel 60 V (D-S) MOSFET
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