Datasheet > SIHG32N50D

SIHG32N50D

更新时间： 2024-10-15 01:17:39

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威世 - VISHAY		/
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8页	183K
描述
D Series Power MOSFET

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SIHG32N50D 数据手册

SiHG32N50D

Vishay Siliconix

www.vishay.com

D Series Power MOSFET

FEATURES

• Optimal Design

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. at 25 °C ()

Q_gmax. (nC)

550

- Low Area Specific On-Resistance

- Low Input Capacitance (C_iss

V_GS= 10 V

0.150

)

- Reduced Capacitive Switching Losses

- High Body Diode Ruggedness

- Avalanche Energy Rated (U_IS)

• Optimal Efficiency and Operation

- Low Cost

_gs(nC)

_gd(nC)

Configuration

Single

TO-247AC

- Simple Gate Drive Circuitry

- Low Figure-Of-Merit (FOM): R_onx Q_g

- Fast Switching

• Material categorization: For definitions of compliance

please see www.vishay.com/doc?99912

APPLICATIONS

• Consumer Electronics

- Displays (LCD or Plasma TV

• Server and Telecom Power Supplies

- SMPS

N-Channel MOSFET

• Industrial

- Welding, Induction Heating, Motor Drives

• Battery Chargers

ORDERING INFORMATION

Package

TO-247AC

Lead (Pb)-free

SiHG32N50D-E3

Lead (Pb)-free and Halogen-free

SiHG32N50D-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

500

Gate-Source Voltage

V_GS

Gate-Source Voltage AC (f > 1 Hz)

T_C= 25 °C

Continuous Drain Current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

Single Pulse Avalanche Energy^b

3.1

W/°C

E_AS

P_D

225

Maximum Power Dissipation

390

Operating Junction and Storage Temperature Range

Drain-Source Voltage Slope

Reverse Diode dV/dt^d

T_J, T_stg

- 55 to + 150

°C

T_J= 125 °C

dV/dt

V/ns

°C

0.37

300^c

Soldering Recommendations (Peak Temperature)

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature.

b. V_DD= 50 V, starting T_J= 25 °C, L = 2.3 mH, R_g= 25 , I_AS= 14 A.

c. 1.6 mm from case.

d. I_SD I_D, starting T_J= 25 °C.

S12-1458-Rev. A, 18-Jun-12

Document Number: 91515

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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