SiHG25N40D
Vishay Siliconix
www.vishay.com
D Series Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
PRODUCT SUMMARY
VDS (V) at TJ max.
DS(on) max. at 25 °C ()
Qg max. (nC)
450
R
VGS = 10 V
0.17
• Optimal Design
88
12
- Low Area Specific On-Resistance
- Low Input Capacitance (Ciss
Q
gs (nC)
gd (nC)
)
Q
23
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
Configuration
Single
D
TO-247AC
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): Ron x Qg
- Fast Switching
G
• Compliant to RoHS Directive 2011/65/EU
S
D
APPLICATIONS
G
S
N-Channel MOSFET
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Lighting
• Industrial
- Welding
- Induction Heating
- Motor Drives
- Battery Chargers
• SMPS
ORDERING INFORMATION
Package
TO-247AC
Lead (Pb)-free
SiHG25N40D-E3
SiHG25N40D-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
VDS
400
V
Gate-Source Voltage
30
VGS
Gate-Source Voltage AC (f > 1 Hz)
30
TC = 25 °C
C = 100 °C
25
Continuous Drain Current (TJ = 150 °C)
VGS at 10 V
ID
T
16
A
Pulsed Drain Currenta
IDM
78
2.2
Linear Derating Factor
W/°C
mJ
W
Single Pulse Avalanche Energyb
Maximum Power Dissipation
EAS
PD
556
278
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
TJ, Tstg
- 55 to + 150
24
°C
TJ = 125 °C
dV/dt
V/ns
°C
Reverse Diode dV/dtd
0.6
300c
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. VDD = 50 V, starting TJ = 25 °C, L = 2.3 mH, Rg = 25 , IAS = 17 A.
c. 1.6 mm from case.
d. ISD ID, starting TJ = 25 °C.
S12-0625-Rev. B, 26-Mar-12
Document Number: 91484
1
For technical questions, contact: hvm@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000