Datasheet > SIHFU9024-E3

SIHFU9024-E3

更新时间： 2024-11-25 12:14:51

品牌	Logo	应用领域
科盛美 - KERSEMI		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
7页	4492K
描述
Power MOSFET

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中文翻译

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数据手册

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SIHFU9024-E3 数据手册

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Dynamic dV/dt Rating

- 60

• Repetitive Avalanche Rated

Available

_DS(on)(Ω)

V_GS= - 10 V

0.28

• Surface Mount (IRFR9024/SiHFR9024)

RoHS*

COMPLIANT

Q_g(Max.) (nC)

Q_gs(nC)

• Straight Lead (IRFU9024/SiHFU9024)

5.4

• Available in Tape and Reel

Q_gd(nC)

• P-Channel

Configuration

Single

• Fast Switching

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

DPAK

(TO-252)

IPAK

(TO-251)

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU/SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surcace mount applications.

P-Channel MOSFET

ORDERING INFORMATION

Package

DPAK (TO-252)

IRFR9024PbF

SiHFR9024-E3

IRFR9024

DPAK (TO-252)

IRFR9024TRPbF^a

SiHFR9024T-E3^a

IRFR9024TR^a

DPAK (TO-252)

IRFR9024TRLPbF^a

SiHFR9024TL-E3^a

IRFR9024TRL^a

SiHFR9024TL^a

DPAK (TO-252)

IRFR9024TRRPbF^a

SiHFR9024TR-E3^a

IPAK (TO-251)

IRFU9024PbF

SiHFU9024-E3

IRFU9024

Lead (Pb)-free

SnPb

SiHFR9024

SiHFR9024T^a

SiHFU9024

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

- 60

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

- 8.8

- 5.6

- 35

Continuous Drain Current

V_GSat - 10 V

I_D

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.33

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

0.020

300

E_AS

I_AR

- 8.8

5.0

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.5

dV/dt

- 4.5

- 55 to + 150

260^d

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 4.5 mH, R_G= 25 Ω, I_AS= - 8.8 A (see fig. 12).

c. I_SD≤ - 11 A, dI/dt ≤ 140 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

www.kersemi.com

12 3 4 5 6 7

中文翻译

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与SIHFU9024-E3相关器件

型号	品牌	获取价格	描述	数据表
SIHFU9110	KERSEMI	获取价格	Power MOSFET
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SIHFU9110-E3	KERSEMI	获取价格	Power MOSFET
SIHFU9110-E3	VISHAY	获取价格	Power MOSFET
SIHFU9110-GE3	VISHAY	获取价格	TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251, HALOGEN FREE AND R
SIHFU9120	KERSEMI	获取价格	Dynamic dV/dt Rating
SIHFU9120	VISHAY	获取价格	Power MOSFET
SIHFU9120-E3	KERSEMI	获取价格	Dynamic dV/dt Rating
SIHFU9120-E3	VISHAY	获取价格	Power MOSFET
SIHFU9210	VISHAY	获取价格	Power MOSFET

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