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SIHFPE450

更新时间: 2024-10-17 21:19:07
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
9页 1526K
描述
TRANSISTOR 5.4 A, 800 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN, FET General Purpose Power

SIHFPE450 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-247
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknown风险等级:5.21
其他特性:AVALANCHE RATED雪崩能效等级(Eas):490 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):5.4 A最大漏极电流 (ID):5.4 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W最大脉冲漏极电流 (IDM):22 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:TIN LEAD
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SIHFPE450 数据手册

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IRFPE40, SiHFPE40  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
800  
Available  
• Repetitive Avalanche Rated  
R
DS(on) (Ω)  
VGS = 10 V  
2.0  
RoHS*  
• Isolated Central Mounting Hole  
• Fast Switching  
Qg (Max.) (nC)  
130  
17  
COMPLIANT  
Q
Q
gs (nC)  
gd (nC)  
• Ease of Paralleling  
72  
Configuration  
Single  
• Simple Drive Requirements  
• Compliant to RoHS Directive 2002/95/EC  
D
TO-247AC  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The  
TO-247AC  
package  
is  
preferred  
for  
S
commercial-industrial applications where higher power  
levels preclude the use of TO-220AB devices. The  
TO-247AC is similar but superior to the earlier TO-218  
package because its isolated mounting hole. It also provides  
greater creepage distances between pins to meet the  
requirements of most safety specifications.  
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-247AC  
IRFPE450PbF  
SiHFPE450-E3  
IRFPE450  
Lead (Pb)-free  
SnPb  
SiHFPE450  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
800  
V
VGS  
20  
T
C = 25 °C  
5.4  
Continuous Drain Current  
VGS at 10 V  
ID  
A
TC = 100 °C  
3.4  
Pulsed Drain Currenta  
IDM  
22  
Linear Derating Factor  
1.2  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
490  
5.4  
EAR  
15  
150  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
2.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 31 mH, Rg = 25 Ω, IAS = 5.4 A (see fig. 12).  
c. ISD 5.4 A, dI/dt 120 A/μs, VDD 600, TJ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91247  
S11-0442-Rev. B, 14-Mar-11  
www.vishay.com  
1
This datasheet is subject to change without notice.  
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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