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SIHF840LCL-GE3

更新时间： 2024-10-15 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 196K
描述
TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, HALOGEN FREE AND ROHS COMPLIANT, TO-262, I2PAK-3, FET General Purpose Power

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SIHF840LCL-GE3 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：TO-262AA
包装说明：IN-LINE, R-PSIP-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.29.00.95
风险等级：5.07其他特性：AVALANCHE RATED
雪崩能效等级（Eas）：510 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：500 V最大漏极电流 (Abs) (ID)：8 A
最大漏极电流 (ID)：8 A最大漏源导通电阻：0.85 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-262AA
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：125 W最大脉冲漏极电流 (IDM)：28 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

SIHF840LCL-GE3 数据手册

 浏览型号SIHF840LCL-GE3的Datasheet PDF文件第2页浏览型号SIHF840LCL-GE3的Datasheet PDF文件第3页浏览型号SIHF840LCL-GE3的Datasheet PDF文件第4页浏览型号SIHF840LCL-GE3的Datasheet PDF文件第5页浏览型号SIHF840LCL-GE3的Datasheet PDF文件第6页浏览型号SIHF840LCL-GE3的Datasheet PDF文件第7页 
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Halogen-free According to IEC 61249-2-21  
Definition  
• Ultra Low Gate Charge  
500  
RDS(on) ()  
VGS = 10 V  
0.85  
• Reduced Gate Drive Requirement  
• Enhanced 30 V VGS Rating  
• Reduced Ciss, Coss, Crss  
• Extremely High Frequency Operation  
• Repetitive Avalanche Rated  
• Compliant to RoHS Directive 2002/95/EC  
Qg (Max.) (nC)  
39  
10  
Q
Q
gs (nC)  
gd (nC)  
19  
Configuration  
Single  
DESCRIPTION  
D
This new series of low charge Power MOSFETs achieve  
significantly lower gate charge then conventional Power  
MOSFETs. Utilizing the new LCDMOS (low charge device  
Power MOSFETs) technology, the device improvements are  
achieved without added product cost, allowing for reduced  
gate drive requirements and total system savings. In  
addition, reduced switching losses and improved efficiency  
are achievable in a variety of high frequency applications.  
Frequencies of a few MHz at high current are possible using  
the new low charge Power MOSFETs.  
D2PAK (TO-263)  
I2PAK (TO-262)  
G
G
D
S
D
S
G
S
These device improvements combined with the proven  
ruggedness and reliability that characterize Power  
MOSFETs offer the designer a new power transistor  
standard for switching applications.  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
Lead (Pb)-free and Halogen-free  
D2PAK (TO-263)  
SiHF840LCS-GE3  
IRF840LCSPbF  
SiHF840LCS-E3  
I2PAK (TO-262)  
SiHF840LCL-GE3  
IRF840LCLPbF  
SiHF840LCL-E3  
Lead (Pb)-free  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
500  
V
30  
TC = 25 °C  
C = 100 °C  
8.0  
Continuous Drain Current  
VGS at 10 V  
ID  
T
5.1  
A
Pulsed Drain Currenta, e  
Linear Derating Factor  
Single Pulse Avalanche Energyb, e  
Avalanche Currenta  
IDM  
28  
1.0  
W/°C  
mJ  
A
EAS  
IAR  
510  
8.0  
Repetiitive Avalanche Energya  
EAR  
13  
mJ  
TC = 25 °C  
125  
Maximum Power Dissipation  
PD  
W
V/ns  
°C  
TA = 25 °C  
3.1  
Peak Diode Recovery dV/dtc, e  
dV/dt  
3.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Starting TJ = 25 °C, L = 14 mH, Rg = 25 , IAS = 8.0 A (see fig. 12).  
c. ISD 8.0 A, dI/dt 100 A/μs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. Uses IRF840LC, SiHF840LC data and test conditions.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91068  
S11-1050-Rev. C, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...10

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