Datasheet > SIHF9510S-GE3

SIHF9510S-GE3

更新时间： 2024-11-26 15:51:15

品牌	Logo	应用领域
威世 - VISHAY		局域网开关脉冲晶体管
页数	文件大小	规格书
10页	197K
描述
TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND ROHS COMPLIANT, TO-263, D2PAK-3, FET General Purpose Power

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SIHF9510S-GE3 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	D2PAK
包装说明：	SMALL OUTLINE, R-PSSO-G2	针数：	4
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.09	其他特性：	AVALANCHE RATED
雪崩能效等级（Eas）：	200 mJ	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	最大漏极电流 (Abs) (ID)：	4 A
最大漏极电流 (ID)：	4 A	最大漏源导通电阻：	1.2 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JEDEC-95代码：	TO-263AB
JESD-30 代码：	R-PSSO-G2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	P-CHANNEL
最大功率耗散 (Abs)：	43 W	最大脉冲漏极电流 (IDM)：	16 A
认证状态：	Not Qualified	子类别：	Other Transistors
表面贴装：	YES	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

SIHF9510S-GE3 数据手册

IRF9510S, SiHF9510S

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Halogen-free According to IEC 61249-2-21

Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

- 100

R_DS(on)()

V_GS= - 10 V

1.2

Q_g(Max.) (nC)

Q_gs(nC)

8.7

2.2

4.1

_gd(nC)

• 175 °C Operating Temperature

• Fast Switching

Configuration

Single

• Compliant to RoHS Directive 2002/95/EC

D²PAK (TO-263)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK (TO-263) is a surface mount power package

capable of accommodating die size up to HEX-4. It provides

the highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK (TO-263) is suitable for high current applications

because of its low internal connection resistance and can

dissipate up to 2.0 W in a typical surface mount application.

P-Channel MOSFET

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

D²PAK (TO-263)

SiHF9510S-GE3

IRF9510SPbF

D²PAK (TO-263)

SiHF9510STRL-GE3^a

IRF9510STRLPbF^a

SiHF9510STL-E3^a

Lead (Pb)-free

SiHF9510S-E3

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

V_DS

LIMIT

- 100

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

_C= 25 °C

- 4.0

- 2.8

- 16

Continuous Drain Current

_GSat - 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.29

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Current^a

0.025

200

E_AS

I_AR

- 4.0

4.3

Repetiitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

3.7

dV/dt

- 5.5

- 55 to + 175

300^d

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 18 mH, R_g= 25 , I_AS= - 4.0 A (see fig. 12).

c. I_SD - 4.0 A, dI/dt  75 A/μs, V_DD V_DS, T_J 175 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91073

S11-1050-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...10

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与SIHF9510S-GE3相关器件

型号	品牌	获取价格	描述	数据表
SIHF9510STL	VISHAY	获取价格	TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, F
SIHF9510STL-E3	VISHAY	获取价格	TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO
SIHF9510STRL-GE3	VISHAY	获取价格	TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND R
SIHF9520	VISHAY	获取价格	TRANSISTOR 6.8 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, F
SIHF9520-E3	VISHAY	获取价格	TRANSISTOR 6.8 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT,
SIHF9520STL	VISHAY	获取价格	TRANSISTOR 6.8 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3,
SIHF9520STL-E3	VISHAY	获取价格	TRANSISTOR 6.8 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF9520STR-E3	VISHAY	获取价格	TRANSISTOR 6.8 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT,
SIHF9520STRL-GE3	VISHAY	获取价格	TRANSISTOR 6.8 A, 100 V, 0.6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF9530	VISHAY	获取价格	Power MOSFET

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