Datasheet > SiHF8N50L

SiHF8N50L

更新时间： 2024-11-24 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	161K
描述
Power MOSFET

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数据手册

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SiHF8N50L 数据手册

SiHF8N50L

Vishay Siliconix

www.vishay.com

Power MOSFET

FEATURES

TO-220 FULLPAK

• Low figure-of-merit R_onx Q_g

• 100 % avalanche tested

• Gate charge improved

• t_rr/Q_rrimproved

Available

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non-RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details.



N-Channel MOSFET



PRODUCT SUMMARY

V_DS(V) at T_Jmax.



560

R_DS(on)()

V_GS= 10 V

Q_gmax. (nC)

7.8

_gs(nC)

_gd(nC)

10.4

Configuration

Single

ORDERING INFORMATION

Package

TO-220 FULLPAK

SiHF8N50L-E3

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V_DS

500

Gate-Source Voltage

V_GS

Continuous Drain Current ^a

Pulsed Drain Current ^b

V_GSat 10 V

T_C= 25 °C

I_D

I_DM

Linear Derating Factor

0.32

180

W/°C

Single Pulse Avalanche Energy ^c

Maximum Power Dissipation

Peak Diode Recovery dV/dt ^d

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^e

Mounting Torque

E_AS

P_D

_C= 25 °C

dV/dt

T_J, T_stg

V/ns

-55 to +150

300

°C

For 10 s

M3 screw

0.6

Notes

a. Drain current limited by maximum junction temperature.

b. Repetitive rating; pulse width limited by maximum junction temperature.

c. V_DD= 50 V, starting T_J= 25 °C, L = 10 mH, R_g= 25 , I_AS= 6 A.

d. I_SD 8 A, dI/dt  460 A/μs, V_DD V_DS, T_J 150 °C.

e. 1.6 mm from case.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

R_thJA

°C/W

R_thJC

3.1

S16-1602-Rev. C, 15-Aug-16

Document Number: 91387

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与SiHF8N50L相关器件

型号	品牌	获取价格	描述	数据表
SIHF8N50L-E3	VISHAY	获取价格	TRANSISTOR 8 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-2
SIHF9510	KERSEMI	获取价格	Power MOSFET
SIHF9510	VISHAY	获取价格	Power MOSFET
SIHF9510-E3	VISHAY	获取价格	Power MOSFET
SIHF9510-E3	KERSEMI	获取价格	Power MOSFET
SIHF9510S	VISHAY	获取价格	暂无描述
SIHF9510S-E3	VISHAY	获取价格	TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO
SIHF9510S-GE3	VISHAY	获取价格	TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND R
SIHF9510STL	VISHAY	获取价格	TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3, F
SIHF9510STL-E3	VISHAY	获取价格	TRANSISTOR 4 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, TO

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