SIHF840STR

更新时间： 2024-11-26 06:11:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1040K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SIHF840STR 数据手册

IRF840S, SiHF840S

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Surface Mount

500

• Available in Tape and Reel

• Dynamic dV/dt Rating

Available

_DS(on)(Ω)

V_GS= 10 V

0.85

RoHS*

Q_g(Max.) (nC)

9.3

COMPLIANT

• Repetitive Avalanche Rated

• Fast Switching

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirement

• Lead (Pb)-free Available

D²PAK (TO-263)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SMD-220 is a surface mount power package capable of

accommodating die size up to HEX-4. It provides the highest

power capability and the lowest possible on-resistance in

any existing surface mount package. The SMD-220 is

suitable for high current applications because of its low

internal connection resistance and can dissipate up to 2.0 W

in a typical surface mount application.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRF840SPbF

D²PAK (TO-263)

IRF840STRLPbF^a

SiHF840STL-E3^a

IRF840STR^aL

D²PAK (TO-263)

IRF840STRRPbF^a

SiHF840STR-E3^a

IRF840STR^a

Lead (Pb)-free

SiHF840S-E3

IRF840S

SiHF840S

SnPb

SiHF840STL^a

SiHF840STR^a

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

500

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

8.0

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

5.1

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Avalanche Current^a

0.025

510

E_AS

I_AR

8.0

Repetiitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

125

P_D

V/ns

°C

T_A= 25 °C

3.1

dV/dt

3.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 14 mH, R_G= 25 Ω, I_AS= 8.0 A (see fig. 12).

c. I_SD≤ 8.0 A, dI/dt ≤ 100 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91071

S-81432-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与SIHF840STR相关器件

型号	品牌	获取价格	描述	数据表
SIHF840STR-E3	VISHAY	获取价格	Power MOSFET
SIHF840STRL-GE3	VISHAY	获取价格	TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF840STRR-GE3	VISHAY	获取价格	TRANSISTOR 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, HALOGEN FREE AND
SIHF8N50D	VISHAY	获取价格	D Series Power MOSFET
SiHF8N50L	VISHAY	获取价格	Power MOSFET
SIHF8N50L-E3	VISHAY	获取价格	TRANSISTOR 8 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-2
SIHF9510	KERSEMI	获取价格	Power MOSFET
SIHF9510	VISHAY	获取价格	Power MOSFET
SIHF9510-E3	VISHAY	获取价格	Power MOSFET
SIHF9510-E3	KERSEMI	获取价格	Power MOSFET

与SIHF840STR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

SIHF840STR

SIHF840STR 数据手册

与SIHF840STR相关器件

与SIHF840STR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SIHF840STR

SIHF840STR 数据手册

与SIHF840STR相关器件

与SIHF840STR相关文章

您还可以找

您在本页遇到什么问题？