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SiHA15N60E PDF预览

SiHA15N60E

更新时间: 2024-11-07 14:55:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 170K
描述
E Series Power MOSFET

SiHA15N60E 数据手册

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SiHA15N60E  
Vishay Siliconix  
www.vishay.com  
E Series Power MOSFET  
FEATURES  
D
Thin-Lead TO-220 FULLPAK  
• Low figure-of-merit (FOM) Ron x Qg  
• Low input capacitance (Ciss  
)
• Reduced switching and conduction losses  
• Ultra low gate charge (Qg)  
G
Available  
• Avalanche energy rated (UIS)  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
S
D
G
N-Channel MOSFET  
APPLICATIONS  
• Switch mode power supplies (SMPS)  
• Power factor correction power supplies (PFC)  
• Lighting  
- High-intensity discharge (HID)  
- Fluorescent ballast lighting  
• Consumer  
PRODUCT SUMMARY  
VDS (V) at TJ max.  
650  
RDS(on) max. () at 25 °C  
VGS = 10 V  
0.28  
Qg max. (nC)  
76  
11  
Q
gs (nC)  
gd (nC)  
Q
17  
- Adaptors  
Configuration  
Single  
- Televisions  
- Game console  
• Computing  
- Adaptors  
- ATX power supply  
ORDERING INFORMATION  
Package  
Thin-Lead TO-220 FULLPAK  
SiHA15N60E-E3  
Lead (Pb)-free  
Lead (Pb)-free and halogen-free  
SiHA15N60E-GE3  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
600  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
30  
T
C = 25 °C  
15  
Continuous drain current (TJ = 150 °C) e  
VGS at 10 V  
ID  
TC = 100 °C  
9.6  
A
Pulsed drain current a  
IDM  
39  
Linear derating factor  
0.27  
102  
W/°C  
mJ  
W
Single pulse avalanche energy b  
Maximum power dissipation  
Operating junction and storage temperature range  
Drain-source voltage slope  
EAS  
PD  
34  
TJ, Tstg  
-55 to +150  
70  
°C  
V
DS = 0 V to 80 % VDS  
dV/dt  
V/ns  
Reverse diode dV/dt d  
7.7  
Soldering recommendations (peak temperature) c  
for 10 s  
300  
°C  
Mounting torque  
M3 screw  
0.6  
Nm  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature  
b. VDD = 50 V, starting TJ = 25 °C, L = 11.6 mH, Rg = 25 , IAS = 4.2 A  
c. 1.6 mm from case  
d. ISD ID, dI/dt = 100 A/μs, starting TJ = 25 °C  
e. Limited by maximum junction temperature  
S17-1307-Rev. E, 21-Aug-17  
Document Number: 91571  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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