Datasheet > SiHA21N60EF

SiHA21N60EF

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	162K
描述
EF Series Power MOSFET With Fast Body Diode

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SiHA21N60EF 数据手册

SiHA21N60EF

Vishay Siliconix

www.vishay.com

EF Series Power MOSFET with Fast Body Diode

FEATURES

Thin-Lead TO-220 FULLPAK

• Fast body diode MOSFET using E series

technology

• Reduced t_rr, Q_rr, and I_RRM

• Low figure-of-merit (FOM): R_onx Q_g

• Low input capacitance (C_iss

• Increased robustness due to low Q_rr

• Ultra low gate charge (Q_g)

)

Available

• Avalanche energy rated (UIS)

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

APPLICATIONS

• Telecommunications

- Server and telecom power supplies

• Lighting

PRODUCT SUMMARY

V_DS(V) at T_Jmax.

_DS(on)max. (Ω) at 25 °C

Q_gmax. (nC)

650

V_GS= 10 V

0.176

- High intensity discharge (HID)

- Light emitting diodes (LEDs)

• Consumer and computing

- ATX power supplies

• Industrial

_gs(nC)

_gd(nC)

Configuration

Single

- Welding

- Battery chargers

• Renewable energy

- Solar (PV inverters)

• Switch mode power suppliers (SMPS)

• Applications using the following topologies

- LLC

- Phase shifted bridge (ZVS)

- 3-level inverter

- AC/DC bridge

ORDERING INFORMATION

Package

Thin-Lead TO-220 FULLPAK

SiHA21N60EF-E3

Lead (Pb)-free

Lead (Pb)-free and halogen-free

SiHA21N60EF-GE3

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-source voltage

Gate-source voltage

V_DS

600

V_GS

T_C= 25 °C

Continuous drain current (T_J= 150 °C)

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.28

367

W/°C

Single pulse avalanche energy ^b

Maximum power dissipation

Operating junction and storage temperature range

Drain-source voltage slope

E_AS

P_D

T_J, T_stg

-55 to +150

°C

T_J= 125 °C

dV/dt

V/ns

Reverse diode dV/dt ^d

Soldering recommendations (peak temperature) ^c

for 10 s

300

°C

Mounting torque

M3 screw

0.6

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature

b. V_DD= 50 V, starting T_J= 25 °C, L = 28.2 mH, R_g= 25 Ω, I_AS= 5.1 A

c. 1.6 mm from case

d. I_SD≤ I_D, dI/dt = 900 A/μs, starting T_J= 25 °C

S21-0257-Rev. F, 22-Mar-2021

Document Number: 91597

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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