5秒后页面跳转
SI8808DB PDF预览

SI8808DB

更新时间: 2024-11-09 12:52:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 150K
描述
N-Channel 30 V (D-S) MOSFET

SI8808DB 数据手册

 浏览型号SI8808DB的Datasheet PDF文件第2页浏览型号SI8808DB的Datasheet PDF文件第3页浏览型号SI8808DB的Datasheet PDF文件第4页浏览型号SI8808DB的Datasheet PDF文件第5页浏览型号SI8808DB的Datasheet PDF文件第6页浏览型号SI8808DB的Datasheet PDF文件第7页 
New Product  
Si8808DB  
Vishay Siliconix  
N-Channel 30 V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
TrenchFET® Power MOSFET  
VDS (V)  
RDS(on) () Max.  
0.095 at VGS = 4.5 V  
0.105 at VGS = 2.5 V  
0.120 at VGS = 1.8 V  
0.165 at VGS = 1.5 V  
ID (A)a  
2.5  
Qg (Typ.)  
Small 0.8 mm x 0.8 mm outline area  
Low 0.4 mm max. profile  
30 V max. Rating and Low On-Resistance  
Material categorization:  
2.3  
30  
3.7 nC  
2.2  
For definitions of compliance please see  
www.vishay.com/doc?99912  
1.9  
MICRO FOOT  
APPLICATIONS  
Bump Side View  
Backside View  
Load Switch  
High Speed Switching  
DC/DC Converters  
For Smart Phones, Tablet PCs and  
Mobile Computing  
D
S
S
G
D
2
3
1
4
G
Device Marking: A I  
xxx = Date/Lot Traceability Code  
Ordering Information:  
Si8808DB-T2-E1 (Lead (Pb)-free and Halogen-free)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
30  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
8
TA = 25 °C  
A = 70 °C  
2.5a  
2a  
1.8b  
1.4b  
10  
T
Continuous Drain Current (TJ = 150 °C)  
ID  
TA = 25 °C  
TA = 70 °C  
A
IDM  
IS  
Pulsed Drain Current (t = 300 µs)  
T
A = 25 °C  
0.7a  
0.4b  
0.9a  
0.6a  
0.5b  
0.3b  
- 55 to 150  
260  
Continuous Source-Drain Diode Current  
TA = 25 °C  
TA = 25 °C  
T
A = 70 °C  
Maximum Power Dissipation  
PD  
W
TA = 25 °C  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)c  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
RthJA  
Typical  
105  
Maximum  
135  
Unit  
Maximum Junction-to-Ambienta, d  
t 5 s  
°C/W  
Maximum Junction-to-Ambientb, e  
200  
260  
Notes:  
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.  
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.  
c. Refer to IPC/JEDEC (J-STD-020), no manual or hand soldering.  
d. Maximum under steady state conditions is 185 °C/W.  
e. Maximum under steady state conditions is 330 °C/W.  
Document Number: 62547  
S12-1766-Rev. A, 23-Jul-12  
For technical questions, contact: pmostechsupport@vishay.com  
This document is subject to change without notice.  
www.vishay.com  
1
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

与SI8808DB相关器件

型号 品牌 获取价格 描述 数据表
SI8808DB-T2-E1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semi
SI8810 MCC

获取价格

Tape: 3K/Reel, 120K/Ctn.;
Si8810EDB VISHAY

获取价格

N-Channel 20 V (D-S) MOSFET
SI8811L ETC

获取价格

Analog IC
SI-8811L SANKEN

获取价格

Separate Excitation Switching Type with Transformer
SI8812DB VISHAY

获取价格

N-Channel 20 V (D-S) MOSFET
Si8816EDB VISHAY

获取价格

N-Channel 30 V (D-S) MOSFET
SI8816EDB-T2-E1 VISHAY

获取价格

MOSFET N-CH 30V MICRO FOOT
SI8817DB VISHAY

获取价格

P-Channel 20 V (D-S) MOSFET
Si8819EDB VISHAY

获取价格

P-Channel 12 V (D-S) MOSFET