Datasheet > Si8819EDB

Si8819EDB

更新时间： 2024-11-19 14:56:03

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	162K
描述
P-Channel 12 V (D-S) MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

Si8819EDB 数据手册

Si8819EDB

Vishay Siliconix

www.vishay.com

P-Channel 12 V (D-S) MOSFET

FEATURES

• TrenchFET^®power MOSFET

MICRO FOOT^®0.8 x 0.8

• Small 0.8 mm x 0.8 mm outline area

• Low 0.4 mm max. profile

xxx

• Typical ESD protection 1700 V HBM

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Backside View

Bump Side View

Marking code: xx = AK

APPLICATIONS

xxx = Date / lot traceability code

• Load switches and battery switches

• High speed switching

PRODUCT SUMMARY

V_DS(V)

-12

0.080

0.100

0.190

0.280

• For smart phones, tablet PCs, and

mobile computing

R_DS(on)max. () at V_GS= -3.7 V

R_DS(on)max. () at V_GS= -2.5 V

R_DS(on)max. () at V_GS= -1.8 V

R_DS(on)max. () at V_GS= -1.5 V

Q_gtyp. (nC)

_D(A) ^{a, e}

-2.9

P-Channel MOSFET

Configuration

Single

ORDERING INFORMATION

Package

MICRO FOOT

Lead (Pb)-free and halogen-free

Si8819EDB-T2-E1

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

-12

Unit

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

-2.9 ^a

-2.3 ^a

-2.1 ^b

-1.7 ^b

-15

-0.7 ^a

-0.4 ^b

0.9 ^a

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

Continuous source-drain diode current

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

0.6 ^a

Maximum power dissipation

P_D

0.5 ^b

0.3 ^b

-55 to +150

260

Operating junction and storage temperature range

Package reflow conditions ^c

T_J, T_stg

VPR

°C

IR/Convection

260

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s

c. Refer to IPC/JEDEC^®(J-STD-020), no manual or hand soldering

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump

e. Based on T_A= 25 °C

S15-0346-Rev. B, 23-Feb-15

Document Number: 62963

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

中文翻译

下载PDF

与Si8819EDB相关器件

型号	品牌	获取价格	描述	数据表
Si8821EDB	VISHAY	获取价格	P-Channel 30 V (D-S) MOSFET
SI8821EDB-T2-E1	VISHAY	获取价格	Small Signal Field-Effect Transistor
SI8822	TYSEMI	获取价格	VDS (V) = 20V ID = 7A (VGS=10V) Drain-Source Voltage VDS 20 V
SI8822	KEXIN	获取价格	Dual N-Channel MOSFET
SI88220BD-IS	SILICON	获取价格	DUAL DIGITAL ISOLATORS WITH DC-DC CONVERTER
SI88220ED-IS	SILICON	获取价格	DUAL DIGITAL ISOLATORS WITH DC-DC CONVERTER
SI88221BD-IS	SILICON	获取价格	DUAL DIGITAL ISOLATORS WITH DC-DC CONVERTER
SI88221ED-IS	SILICON	获取价格	DUAL DIGITAL ISOLATORS WITH DC-DC CONVERTER
SI88222BD-IS	SILICON	获取价格	DUAL DIGITAL ISOLATORS WITH DC-DC CONVERTER
SI88222ED-IS	SILICON	获取价格	DUAL DIGITAL ISOLATORS WITH DC-DC CONVERTER

与Si8819EDB相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

36

产品中心

服务支持

精选活动

关于我们

帮助中心

Si8819EDB

Si8819EDB 数据手册

与Si8819EDB相关器件

与Si8819EDB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

Si8819EDB

Si8819EDB 数据手册

与Si8819EDB相关器件

与Si8819EDB相关文章

您还可以找

您在本页遇到什么问题？