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SI8822 PDF预览

SI8822

更新时间: 2024-11-18 12:46:59
品牌 Logo 应用领域
TYSEMI /
页数 文件大小 规格书
2页 234K
描述
VDS (V) = 20V ID = 7A (VGS=10V) Drain-Source Voltage VDS 20 V

SI8822 数据手册

 浏览型号SI8822的Datasheet PDF文件第2页 
ICIC  
Product specification  
SI8822  
TSSOP-8  
Features  
Unit: mm  
VDS (V) = 20V  
ID = 7A (VGS=10V)  
RDS(ON) 21mΩ (VGS = 10V)  
RDS(ON) 24mΩ (VGS = 4.5V)  
RDS(ON) 32mΩ (VGS = 2.5V)  
RDS(ON) 50mΩ (VGS = 1.8V)  
D1  
D2  
1
2
3
4
8
7
6
5
D1/D2  
S1  
D1/D2  
S2  
S2  
S1  
G1  
G1  
G2  
G2  
S2  
S1  
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
Rating  
20  
Unit  
V
Gate-Source Voltage  
VGS  
V
±12  
7
Continuous Drain Current *1  
TA=25℃  
TA=70℃  
ID  
A
5.7  
Pulsed Drain Current *2  
Power Dissipation *1 TA=25℃  
TA=70℃  
IDM  
PD  
30  
1.5  
W
0.96  
83  
Maximum Junction-to-Ambient *1  
Maximum Junction-to-Ambient *1  
t 10s  
Steady-State  
RθJA  
/W  
130  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
*1The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.  
Copper, in a still air environment with TA =25℃  
*2 Repetitive rating, pulse width limited by junction temperature.  
http://www.twtysemi.com  
sales@twtysemi.com  
1 of 2  
4008-318-123  

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