Datasheet > Si8823EDB

Si8823EDB

更新时间： 2024-11-19 14:55:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	160K
描述
P-Channel 20 V (D-S) MOSFET

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Si8823EDB 数据手册

Si8823EDB

Vishay Siliconix

www.vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

MICRO FOOT^®0.8 x 0.8

• TrenchFET^®Gen III p-channel power MOSFET

• Compact 0.8 mm x 0.8 mm outline area

• Low 0.4 mm max. profile

xxx

• R_DS(on)rating at V_GS= -1.5 V

• Typical ESD protection: 1900 V HBM

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Backside View

Bump Side View

APPLICATIONS

PRODUCT SUMMARY

V_DS(V)

• Load switch

-20

0.095

0.120

0.200

0.335

6.6

• Power management in battery-

operated, mobile, and wearable

devices

R_DS(on)max. () at V_GS= -4.5 V

R_DS(on)max. () at V_GS= -2.5 V

R_DS(on)max. () at V_GS= -1.8 V

R_DS(on)max. () at V_GS= -1.5 V

Q_gtyp. (nC)

I_D(A)

P-Channel MOSFET

-2.7 ^a

Configuration

Single

ORDERING INFORMATION

Package

MICRO FOOT

Lead (Pb)-free and halogen-free

Si8823EDB-T2-E1

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-20

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

-2.7 ^a

-2.1 ^a

-1.9 ^b

-1.5 ^b

-15

-0.7 ^a

-0.4 ^b

0.9 ^a

Continuous drain current (T_J= 150 °C)

I_D

Pulsed drain current (t = 100 μs)

I_DM

I_S

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous source-drain diode current

0.6 ^a

0.5 ^b

0.3 ^b

Maximum power dissipation

P_D

Operating junction and storage temperature range

T_J, T_stg

VPR

-55 to +150

°C

Package reflow conditions ^c

260

IR / convection

THERMAL RESISTANCE RATINGS

PARAMETER

Maximum junction-to-ambient ^{a, f}

Maximum junction-to-ambient ^{b, g}

SYMBOL

TYPICAL

105

MAXIMUM

UNIT

135

260

t  5 s

R_thJA

°C/W

200

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC / JEDEC^®(J-STD-020), no manual or hand soldering.

d. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump.

e. Based on T_A= 25 °C.

f. Maximum under steady state conditions is 185 °C/W.

g. Maximum under steady state conditions is 330 °C/W.

S16-1562-Rev. A, 08-Aug-16

Document Number: 76852

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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