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SI8824EDB-T2-E1 PDF预览

SI8824EDB-T2-E1

更新时间: 2024-11-05 15:51:15
品牌 Logo 应用领域
威世 - VISHAY PC开关晶体管
页数 文件大小 规格书
8页 160K
描述
Small Signal Field-Effect Transistor,

SI8824EDB-T2-E1 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:GRID ARRAY, S-PBGA-B4Reach Compliance Code:unknown
ECCN代码:EAR99Factory Lead Time:42 weeks
风险等级:2.28Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:309222
Samacsys Pin Count:4Samacsys Part Category:Integrated Circuit
Samacsys Package Category:BGASamacsys Footprint Name:4-Bump (0.8 mm x 0.8 mm, 0.4 mm Pitch)
Samacsys Released Date:2016-06-20 01:52:20Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏源导通电阻:0.082 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:S-PBGA-B4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:GRID ARRAY峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL表面贴装:YES
端子形式:BALL端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI8824EDB-T2-E1 数据手册

 浏览型号SI8824EDB-T2-E1的Datasheet PDF文件第2页浏览型号SI8824EDB-T2-E1的Datasheet PDF文件第3页浏览型号SI8824EDB-T2-E1的Datasheet PDF文件第4页浏览型号SI8824EDB-T2-E1的Datasheet PDF文件第5页浏览型号SI8824EDB-T2-E1的Datasheet PDF文件第6页浏览型号SI8824EDB-T2-E1的Datasheet PDF文件第7页 
Si8824EDB  
Vishay Siliconix  
www.vishay.com  
N-Channel 20 V (D-S) MOSFET  
FEATURES  
• TrenchFET® power MOSFET  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) (Ω) MAX.  
0.075 at VGS = 4.5 V  
0.082 at VGS = 2.5 V  
0.090 at VGS = 1.8 V  
0.125 at VGS = 1.5 V  
0.175 at VGS = 1.2 V  
ID (A) a  
2.9  
Qg (TYP.)  
• Ultra small 0.8 mm x 0.8 mm outline  
• Ultra thin 0.357 mm height  
2.7  
• Typical ESD protection 2000 V (HBM)  
20  
2.6  
2.7 nC  
• Material categorization: for definitions of  
compliance please see www.vishay.com/doc?99912  
2.2  
1.5  
APPLICATIONS  
D
• Ultraportable and wearable devices  
• Load switch with low voltage drop  
• Load switch for 1.2 V, 1.5 V, and 1.8 V  
MICRO FOOT® 0.8 x 0.8  
S
2
S
3
power lines  
G
xxx  
xx  
• Small signal and high speed switching  
1
G
4
D
1
Backside View  
Bump Side View  
S
Marking Code: AM  
N-Channel MOSFET  
Ordering Information:  
Si8824EDB-T2-E1 (Lead (Pb)-free and Halogen-free)  
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
5
TA = 25 °C  
TA = 70 °C  
TA = 25 °C  
TA = 70 °C  
2.9 a  
2.3 a  
2.1 b  
1.7 b  
15  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
Pulsed Drain Current (t = 100 μs)  
IDM  
IS  
TA = 25 °C  
TA = 25 °C  
TA = 25 °C  
TA = 70 °C  
TA = 25 °C  
TA = 70 °C  
0.7 a  
0.4 b  
0.9 a  
0.6 a  
0.5 b  
0.3 b  
-55 to +150  
260  
Continuous Source-Drain Diode Current  
Maximum Power Dissipation  
PD  
W
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature) c  
TJ, Tstg  
°C  
THERMAL RESISTANCE RATINGS  
PARAMETER  
Maximum Junction-to-Ambient a, d  
Maximum Junction-to-Ambient b, e  
Notes  
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.  
SYMBOL  
RthJA  
TYPICAL  
105  
MAXIMUM  
UNIT  
135  
260  
t 5 s  
°C / W  
200  
b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.  
c. Refer to IPC / JEDEC® (J-STD-020), no manual or hand soldering.  
d. Maximum under steady state conditions is 185 °C / W.  
e. Maximum under steady state conditions is 330 °C / W.  
S15-0338-Rev. A, 23-Feb-15  
Document Number: 62978  
1
For technical questions, contact: pmostechsupport@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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