Datasheet > Si8851EDB

Si8851EDB

更新时间： 2024-11-19 14:54:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	189K
描述
P-Channel 20 V (D-S) MOSFET

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Si8851EDB 数据手册

Si8851EDB

Vishay Siliconix

www.vishay.com

P-Channel 20 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

• TrenchFET^®power MOSFET

• Small 2.4 mm x 2 mm outline area

• Low 0.4 mm max. profile

V_DS(V)

R_DS(on)() Max.

I_D(A) ^{a, d}Q_g(Typ.)

0.0080 at V_GS= -4.5 V

0.0086 at V_GS= -3.7 V

0.0110 at V_GS= -2.5 V

0.0185 at V_GS= -1.8 V

-16.7

-16.1

70 nC

-14.2

-20

• Typical ESD protection 6000 V HBM

-11

• Material categorization: for definitions

of compliance please see www.vishay.com/doc?99912

Power MICRO FOOT 2.4 x 2

APPLICATIONS

• Battery switch / load switch

• Power management

0.4 mm

8851

xxx

• For smart phones, tablet PCs, and

mobile computing

Backside View

Bump Side View

P-Channel MOSFET

Ordering Information: 

Si8851EDB-T2-E1 (Lead (Pb)-free and halogen-free)

ABSOLUTE MAXIMUM RATINGS (T_A= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-20

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

-16.7 ^a

-13.4 ^a

-7.7 ^b

-6.2 ^b

-80

-2.6 ^a

-0.55 ^b

3.1 ^a

Continuous Drain Current (T_J= 150 °C)

I_D

Pulsed Drain Current (t = 100 μs)

I_DM

I_S

T_C= 25 °C

T_A= 25 °C

T_A= 70 °C

T_A= 25 °C

T_A= 70 °C

Continuous Source-Drain Diode Current

2 ^a

Maximum Power Dissipation

P_D

0.66 ^b

0.43 ^b

-55 to +150

260

Operating Junction and Storage Temperature Range

Package Reflow Conditions ^c

T_J, T_stg

VPR

°C

IR/Convection

260

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 s.

b. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 5 s.

c. Refer to IPC/JEDEC^®(J-STD-020), no manual or hand soldering.

d. Based on T_A= 25 °C.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

Typical

Maximum

Unit

Maximum Junction-to-Ambient ^{a, b}

Maximum Junction-to-Ambient ^{c, d}

t = 5 s

R_thJA

°C/W

145

188

Notes

a. Surface mounted on 1" x 1" FR4 board with full copper.

b. Maximum under steady state conditions is 85 °C/W.

c. Surface mounted on 1" x 1" FR4 board with minimum copper.

d. Maximum under steady state conditions is 330 °C/W.

S15-1120-Rev. B, 18-May-15

Document Number: 64197

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与Si8851EDB相关器件

型号	品牌	获取价格	描述	数据表
SI88620BD-IS	SILICON	获取价格	Analog Circuit, PDSO20,
SI88620ED-IS	SILICON	获取价格	DUAL DIGITAL ISOLATORS WITH DC-DC CONVERTER
SI88621BC-IS	SILICON	获取价格	Analog Circuit,
SI88621BD-IS	SILICON	获取价格	Analog Circuit, PDSO20,
SI88621EC-IS	SILICON	获取价格	Analog Circuit,
SI88621EC-ISR	SILICON	获取价格	Analog Circuit,
SI88621ED-IS	SILICON	获取价格	Analog Circuit, PDSO20,
SI88622BC-IS	SILICON	获取价格	Analog Circuit,
SI88622BD-IS	SILICON	获取价格	DUAL DIGITAL ISOLATORS WITH DC-DC CONVERTER
SI88622EC-IS	SILICON	获取价格	Analog Circuit,

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