Datasheet > SI8822

SI8822

更新时间： 2024-11-06 18:09:07

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	153K
描述
Dual N-Channel MOSFET

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中文翻译

获取价格

数据手册

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SI8822 数据手册

SMD Type

MOSFIECT

Common-Drain Dual N-Channel Enhancement

Mode Field Effect Transistor

SI8822

TSSOP-8

■ Features

Unit: mm

● VDS (V) = 20V

● ID = 7A (VGS=10V)

● RDS(ON) ＜ 21mΩ (VGS = 10V)

● RDS(ON) ＜ 24mΩ (VGS = 4.5V)

● RDS(ON) ＜ 32mΩ (VGS = 2.5V)

● RDS(ON) ＜ 50mΩ (VGS = 1.8V)

D1/D2

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDS

Rating

Unit

Gate-Source Voltage

VGS

±12

Continuous Drain Current *1

TA=25℃

TA=70℃

5.7

Pulsed Drain Current *2

Power Dissipation *1 TA=25℃

TA=70℃

IDM

1.5

0.96

Maximum Junction-to-Ambient *1

t ≤ 10s

Steady-State

RθJA

℃/W

130

Junction and Storage Temperature Range

TJ, TSTG

-55 to 150

℃

*1The value of R θJA is measured with the device mounted on 1in ²FR-4 board with 2oz.

Copper, in a still air environment with TA =25℃

*2 Repetitive rating, pulse width limited by junction temperature.

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