SI4484EY

更新时间： 2024-01-11 02:24:44

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	50K
描述
N-Channel 100-V (D-S) MOSFET

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

SI4484EY 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.83	Is Samacsys：	N
配置：	Single	最大漏极电流 (Abs) (ID)：	4.8 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	1.8 W	子类别：	FET General Purpose Power
Base Number Matches：	1

SI4484EY 数据手册

Si4484EY

Vishay Siliconix

SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

Gate-Body Leakage

= V , I = 250 mA

GS(th)

= 0 V, V = "20 V

"100

GSS

= 80 V, V = 0 V

Zero Gate Voltage Drain Current

DSS

= 80 V, V = 0 V, T = 85_C

On-State Drain Current

w 5 V, V = 10 V

D(on)

0.028

0.034

0.040

= 10 V, I = 6.9 A

Drain-Source On-State Resistance

DS(on)

= 6.0 V, I = 6.4 A

0.032

Forward Transconductance

= 15 V, I = 6.9 A

Diode Forward Voltage

= 3.1 A, V = 0 V

0.8

1.2

Dynamic^b

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Gate Resistance

Turn-On Delay Time

Rise Time

7.6

5.4

1.25

= 50 V, V = 10 V, I = 6.9 A

0.5

2.2

d(on)

= 50 V, R = 50 W

= 10 V, R = 6 W

GEN G

^ 1 A, V

Turn-Off Delay Time

Fall Time

d(off)

Source-Drain Reverse Recovery Time

= 3.1 A, di/dt = 100 A/ms

Notes

a. Pulse test; pulse width v 300 ms, duty cycle v 2%.

b. Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

Output Characteristics

Transfer Characteristics

= 10 thru 6 V

5 V

= 150_C

25_C

-55_C

4 V

Drain-to-Source Voltage (V)

- Gate-to-Source Voltage (V)

Document Number: 71189

www.vishay.com

S-03951—Rev. C, 26-May-03

123 4

下载PDF

与SI4484EY相关器件

型号	品牌	描述	获取价格	数据表
SI4484EY_06	VISHAY	N-Channel 100-V (D-S) MOSFET	获取价格
SI4484EY-T1	VISHAY	N-Channel 100-V (D-S) MOSFET	获取价格
SI4484EY-T1-GE3	VISHAY	Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	获取价格
SI4485DY	VISHAY	P-Channel 30 V (D-S) MOSFET	获取价格
SI4486EY	VISHAY	N-Channel 100-V (D-S) MOSFET	获取价格
SI4486EY_06	VISHAY	N-Channel 100-V (D-S) MOSFET	获取价格