SI3915DV

更新时间： 2024-11-20 22:33:51

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管
页数	文件大小	规格书
4页	59K
描述
Dual P-Channel 12-V (D-S) MOSFET

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中文翻译

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技术参数
数据手册

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SI3915DV 技术参数

是否无铅：	含铅	生命周期：	Transferred
零件包装代码：	TSOP	包装说明：	,
针数：	6	Reach Compliance Code：	unknown
风险等级：	5.06	Is Samacsys：	N
Base Number Matches：	1

SI3915DV 数据手册

_C/W

Si3915DV

Vishay Siliconix

New Product

Dual P-Channel 12-V (D-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.120 @ V = –4.5 V

–2.5

–2.0

–1.7

–12

0.175 @ V = –2.5 V

0.240 @ V = –1.8 V

TSOP-6

Top View

3 mm

2.85 mm

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T= _2C5 UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

–12

= 25_C

= 70_C

–2.0

–1.7

–2.5

–2.0

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

–7

Continuous Source Current (Diode Conduction)

–1.05

1.15

0.73

–0.75

0.83

0.53

= 25_C

= 70_C

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

130

110

150

Maximum Junction-to-Ambient

thJA

thJF

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71299

S-01890—Rev. A, 28-Aug-00

www.vishay.com

12 3 4

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